A kind of sapphire polishing composition and preparation method thereof

Abstract

The invention belongs to a sapphire polishing composition and a preparation method thereof. The sapphire polishing composition is composed of the following raw materials in percentage by weight: 20%~40% of nano silicon dioxide, 1%~10% of basic compound, Dispersant 0.1%~3%, Surfactant 0.1%~3%, Corrosion inhibitor 0.001%~1%, The balance is deionized water. The invention reduces the excessive corrosion of the polishing composition on the sapphire wafer by adding the corrosion inhibitor, so that the surface does not produce excessive corrosion defects such as pitting and orange peel, and simultaneously introduces a surfactant that works synergistically with the corrosion inhibitor , increase the corrosion selectivity of the polishing composition, allow the polishing composition to act evenly on the surface of the sapphire wafer, and achieve high-efficiency polishing while ensuring a good surface quality.

Description

technical field [0001] The invention belongs to the technical field of polishing compositions, and in particular relates to a sapphire polishing composition and a preparation method thereof. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical properties and mechanical properties as natural sapphire, has good thermal properties, electrical properties and dielectric properties, chemical corrosion resistance, high infrared transmittance, good wear resistance, second only to hardness For diamond, Da Mo's grade 9, it still has good stability at high temperature, with a melting point of 2030 ° C, so it is widely used in industry, national defense, scientific research and other fields. And it is increasingly used in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, and precision wear-resistant bearings. However, its high br...

AI Technical Summary

Problems solved by technology

Although the existing high-temperature and high-pressure polishing process shortens the polishing time and improves the efficiency by increasing the pressure and temperature, the chemical reaction is intensified due to high temperature, and the surface of the wafer is prone to excessive corrosion, resulting in corrosion spots or even orange peel.

In the low temperature and low pressure state, although the surface quality can be controlled, the removal rate is relatively slow, which increases the processing time and reduces the processing efficiency.

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