Silicon carbide ceramic membrane and preparation method thereof
A technology of silicon carbide ceramics and silicon carbide, applied in chemical instruments and methods, separation methods, and separation of dispersed particles, can solve the problems of high sintering temperature, poor toughness, and low operating temperature, and achieve low sintering temperature and large porosity , the effect of toughness enhancement
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[0038] Preparation of gas-solid separation membrane
[0039] The gas-solid separation membrane of this embodiment can be manufactured through the following steps: Step 1: Mix SiC aggregates, sintering aids, toughening aids, and polymer binders in a certain proportion, and then stir, ball mill, shape and heat After sintering, a silicon carbide support body is obtained; the second step is to coat the surface of the silicon carbide support body with a coating solution, and then dry and sinter to obtain a silicon carbide ceramic film.
[0040]In the first step, the polymer binder can be polyvinyl alcohol, which can be mixed with other powders to make the mixture easier to extrude. During the sintering process, the polymer binder is removed from the film The molding method is selected from extrusion molding or isostatic pressing molding. The function of stirring is to mix the SiC aggregate, sintering aid, toughening aid and binder relatively uniformly. If the stirring time is too...
Embodiment 1
[0050] Mix SiC aggregate, titanium dioxide, silicon micropowder, aluminum silicate fiber and calcium carbonate, wherein the particle size of SiC aggregate is 60 μm, and the weight in the mixed powder is 80g, titanium dioxide 4g, silicon micropowder 7g, calcium carbonate 4g, toughening aid aluminum silicate fiber 5g, also add polymer binder polyvinyl alcohol 20g in addition, after mixing powder body and stirring 0.5h, after ball milling 8h, extrusion molding obtains silicon carbide support body, carries out sintering, with Raise to 300°C at a heating rate of 2°C / min, and then rise to 600°C at a heating rate of 3°C / min. After holding for 2 hours, raise the heating rate to 1400°C at a heating rate of 4°C / min. After holding for 3 hours, cool with the furnace. Mix silicon carbide micropowder with alumina and dispersant methylcellulose binder polyvinyl alcohol and deionized water, wherein silicon carbide micropowder accounts for 15wt%, alumina accounts for 5wt%, dispersant methylcell...
Embodiment 2
[0052] Mix SiC aggregate, titanium dioxide, silicon micropowder and calcium carbonate, wherein the SiC aggregate particle size is 80 μm, and the weight in the mixed powder is 78g, titanium dioxide 5g, silicon micropowder 7g, calcium carbonate 5g, toughening aid 5g of mullite fiber, and 20g of polymer binder polyvinyl alcohol was added, and the mixed powder was stirred for 0.5h, ball milled for 6h, extruded to obtain a silicon carbide support, and sintered at a temperature of 2°C / min. The heating rate was increased to 300°C, and then raised to 600°C at a heating rate of 3°C / min. After holding for 2 hours, the heating rate was raised to 1450°C at a heating rate of 4°C / min. After holding for 3 hours, it was cooled with the furnace. Mix silicon carbide micropowder with alumina, dispersant methylcellulose, binder polyvinyl alcohol, and deionized water, wherein silicon carbide micropowder accounts for 13%, alumina accounts for 3%, and dispersant methylcellulose accounts for 3%. %, t...
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