Preparation method of high-performance TiAl alloy plate
An alloy plate and high-performance technology, applied in the field of preparing TiAl alloy plate, can solve the problems of complex properties of TiAl alloy plate, plate cracking solution heat treatment process, uneven structure, etc., so as to save the solution heat treatment process and save energy. and manpower, the effect of uniform organization
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specific Embodiment approach 1
[0022] Specific embodiment one: the preparation method of a kind of high-performance TiAl alloy plate of this embodiment is carried out according to the following steps:
[0023] 1. Preparation of TiAl alloy blanks: TiAl alloy prefabricated blanks are prepared by powder metallurgy or secondary forging blanks, and then the TiAl alloy prefabricated blanks are subjected to hot isostatic pressing treatment, and then hot isostatic pressed by mechanical processing. The treated TiAl alloy prefabricated billet is processed into a cuboid billet to obtain a TiAl alloy billet;
[0024] The powder metallurgy described in step 1 is a pre-alloyed powder method or an elemental powder method;
[0025] The hot isostatic pressing treatment parameters described in step 1: the hot isostatic pressing temperature is 1000°C to 1250°C, the hot isostatic pressing pressure is 140MPa to 200MPa, and the hot isostatic pressing time is 1h to 5h;
[0026] The thickness of the TiAl alloy blank described in ...
specific Embodiment approach 2
[0039] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the composition of the TiAl alloy blank described in step 1 is: Ti-(42~45)Al-(6~9)V-(0.01%~0.6 %)Y(at.%). Other steps and parameters are the same as those in the first embodiment.
specific Embodiment approach 3
[0040] Specific embodiment three: The difference between this embodiment and specific embodiment one or two is that the composition of the TiAl alloy blank described in step one is: Ti-(43~45)Al-(6~9)Nb-(0.1~ 1) X (at.%), wherein X is one or a mixture of alloying elements B, Si, C or Y. Other steps and parameters are the same as those in Embodiment 1 or 2.
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