Multi-stage magnetic field arc ion plating and radio-frequency magnetron sputtering composite deposition method

Abstract

The invention provides a multi-stage magnetic field arc ion plating and radio-frequency magnetron sputtering composite deposition method and belongs to the technical field of material surface processing. The method aims to solve the problem that low-melting-point pure metal or multicomponent alloy materials and non-metal materials, such as graphite are large in particle in traditional arc ion plating, breaking through the limitations that semiconductor materials and insulating materials can not be used, the ionization rate and thin film deposition efficiency of traditional magnetron sputtering are low and high- melting-point targets are difficult to ionize, and eliminating the limitations of an original method in the aspect of use of the targets. The composite deposition method includes the steps that 1, a workpiece to be plated is placed on a sample table in a vacuum room, and a relative power source is powered on; 2, a thin film is deposited, wherein when the vacuum degree in the vacuum room is smaller than 10-4Pa, work gas is introduced, gas pressure is adjusted, a plating power source is powered on, and energy of a composite plasma is adjusted through a grid bias power supply. By means of a multi-stage magnetic field straight tube magnetic filter device, the defect of large particles is overcome, transmission efficiency of arc plasmas is guaranteed, and required process parameters are set for thin film deposition.

Description

technical field [0001] The invention relates to a composite deposition method of multistage magnetic field arc ion plating and radio frequency magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology can obtain almost all metal ions including carbon ions. At the same time, it has the advantages of high ionization rate, good diffraction, good film-substrate bonding force, good coating quality, high deposition efficiency and easy operation of equipment. Attention is paid to it, and it is one of the physical vapor deposition preparation technologies widely used in industry at present. It can not only be used to prepare metal protective coatings, but also realize the preparation of high-temperature ceramic coatings such as nitrides and carbides through the adjustment of process methods, and it is also used in the field of functional thin films. Arc ion plating can achieve rapid deposition of...

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Problems solved by technology

[0011] The purpose of the present invention is to solve the problem that the traditional arc ion plating method is easy to produce large particle defects, the magnetic filter technology causes low arc plasma transmission efficiency, and the use of low melting point pure metal or multi-element alloy materials and non-metallic materials (such as graphite) as target materials The large particles in the traditional arc ion plating method, the ionization rate of the traditional magnetron sputtering technology and the low deposition efficiency of the film, and the limitations of the use of high melting point targets, use low melting point pure metals or multi-element alloy materials and non-metallic materials ( Especially semiconductor materials and insulating materials) as the target material of radio frequency magnetron sputtering, and then use the arc ion plating method to generate continuous and stable plasma with high ionization rate, and at the same time eliminate the arc plasma through the multi-stage magnetic field straight tube magnetic filtration method Large particle defects contained in the body, while ensuring that the arc plasma passes through the filter device with a high transmission efficiency, so that the surface of the workpiece can be continuously and densely prepared with high-quality films under the condition of applying a negative bias voltage, and at the same time realize the addition of element content in the film To control and reduce the production cost of using alloy targets, improve the deposition efficiency of thin films, reduce the adverse effects of discharge instability and large particle defects on the growth and performance of thin films, a composite deposition of multi-level magnetic field arc ion plating and radio frequency magnetron sputtering is proposed method

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