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Arc ion plating for composite filtering of combined magnetic field and lined bias conical pipe and stepped pipe

A technology of arc ion plating and composite filtration, applied in the field of arc ion plating, which can solve the problems of large particle defects, limited use of target elements, and low transmission efficiency of arc plasma, so as to improve utilization efficiency, realize effective control, and reduce arc Waiting for the effect

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Contamination of film components caused by sub-sputtering, combined with multi-stage magnetic field filtering method and the combination of the shape of the lined bias conical tube and stepped tube combination device's own shape of mechanical barrier shielding and bias electric field attraction to eliminate arc plasma At the same time, ensure that the arc plasma passes through the combination device of the lined bias conical tube and the stepped tube and the multi-stage magnetic field filter device with high transmission efficiency, and then use the movable coil device to control the multi-stage magnetic field device and The transmission direction of the arc plasma transmitted by the combination device of the lined bias conical tube and the stepped tube in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcomes the limitation of the vacuum chamber space. The problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the substrate shape caused by the layout design of the target source can completely eliminate the arc plasma transmitted from the multi-level magnetic field device and the combination device of the lined bias conical tube and the stepped tube. There may be residual large particle defects, so that the ion energy can be adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and a continuous, dense and high-quality film can be prepared. At the same time, the control of the content of target elements in the film can be realized, and the production cost of using alloy targets can be reduced. , improve the transmission efficiency of the arc plasma, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and performance, a combination of magnetic field and lined bias conical tube is proposed Arc Ion Plating Combined with Ladder Tube Filtration

Method used

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  • Arc ion plating for composite filtering of combined magnetic field and lined bias conical pipe and stepped pipe
  • Arc ion plating for composite filtering of combined magnetic field and lined bias conical pipe and stepped pipe
  • Arc ion plating for composite filtering of combined magnetic field and lined bias conical pipe and stepped pipe

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate this embodiment. The device used in this embodiment combines magnetic field and lined bias conical tube and stepped tube compound filter for arc ion plating, including bias power supply (1), arc power supply (2), arc ion plating target Source (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), combination device of lined bias conical tube and stepped tube (6), lined bias power supply (7), movable coil device ( 8), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the combination device of the lined bias conical tube and the stepped tube (6), and the movable coil device ...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field and the arc ion plating of the lined bias conical tube and the ladder tube composite filter are connected, the arc power supply (2) is turned on, and the multi-stage magnetic field is turned on The power supply (5) adjusts the multi-level magnetic field device (4), turns on the liner bias power supply (7), the liner bias conical tube and stepped tube combination device (6) maintains a DC positive bias, and turns on the bias power supply (1 ), turn on the power supply of the movable coil device (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare multilayers with different stress states, microstructures and element ratios The structural film is the same as the second embodiment.

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Abstract

The invention provides arc ion plating for composite filtering of a combined magnetic field and a lined bias conical pipe and a stepped pipe, and belongs to the technical field of material surface treatment. The arc ion plating aims at solving the problems of contamination of large particles in a multi-stage magnetic field filtering device to thin films and losses generated in the plasma transmitting process. The arc ion plating involves a bias power supply, an arc ion plating target source, an arc ion plating target source power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lined bias conical pipe and stepped pipe combination device, a lined bias conical pipe and stepped pipe combination device power supply, a movable coil device, a movable coil device power supply, a bias power supply kymographion and the like. Thin film deposition is carried out, wherein the device is connected, a system is started, when the vacuum degree in a vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power supply is started, the energy of arc plasma is adjusted through the bias power supply, by means of the lined bias conicalpipe and stepped pipe combination device and the multi-stage magnetic field device, large particle defects in the arc plasma are eliminated, the transmission efficiency of the filtering device is improved, losses in the vacuum chamber are reduced, process parameters are set, and thin films are prepared.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and an inner-lined bias conical tube and a stepped tube for composite filtration, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/35C23C14/54
CPCC23C14/325C23C14/352C23C14/3485C23C14/54
Inventor 魏永强王好平宗晓亚侯军兴蒋志强
Owner 魏永强
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