Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Sapphire and machining method thereof

A processing method and sapphire technology, applied in the direction of stone processing equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of unable to obtain material utilization rate, increase material cost, and low product market acceptance.

Active Publication Date: 2015-07-22
CHONGQING SILIAN OPTOELECTRONICS SCI & TECH
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, more existing product designs require small discs with a diameter of more than 10mm or small squares with a side length of more than 10mm. If the 2-inch disc is used for processing, the best material utilization rate cannot be obtained, and the Significantly increase the cost of materials, so that the product market acceptance is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sapphire and machining method thereof
  • Sapphire and machining method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Place the grown sapphire crystal on a fixed tooling, use diamond wires for multi-wire cutting (generally 3 multi-wire cutting machines), and cut the crystal into cubes (cuboid-shaped cubes), the cross-section of which is 55X55mm square, the length is the length actually cut from the crystal.

[0019] The sapphire square is processed into a thin square piece of 55X55mm by intensive multi-wire cutting, and the thickness can be 0.6mm or 0.7mm according to the thickness of the final product.

[0020] Grinding the wafer to remove the cutting line marks; after cleaning, the square wafer is annealed at a temperature of 1400 degrees Celsius in the annealing furnace; the wafer is CMP polished to complete the processing of the sapphire double-sided polished square wafer , to complete the square piece of 55X55mm, the thickness can be 0.3mm, or 0.4mm

[0021] Cut double-sided polished squares into small pieces (windows), which can be cut with an ultra-fast laser. Ultrafast refers...

Embodiment 2

[0026] Adopt the method of embodiment 1 to cut, take the cross-section in the sapphire crystal and take the square square of different side lengths and make a square substrate, further intercept small window slices as needed, and compare with the intercepted quantity of standard 2-inch sapphire discs :

[0027] Take 12 and 14 square pieces with a side length of 10mm and a circle with a diameter of 10mm from a 2-inch circle, respectively;

[0028] From the square sheet of 55X55mm, 25 sheets and 25 sheets can be taken respectively by taking a square sheet with a side length of 10mm and a circular sheet with a diameter of 10mm.

[0029] Take 9 and 12 square pieces with a side length of 11mm and a circle with a diameter of 11mm from a 2-inch circle;

[0030] From the square sheet of 60X60mm, 25 sheets and 25 sheets can be taken respectively by taking a square sheet with a side length of 11 mm and a round sheet with a diameter of 11 mm.

[0031] Take 7 and 10 square pieces with a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a sapphire machining method. The method comprises the steps that a sapphire crystal is cut into a cuboid-shaped diamond, at least the upper bottom face and the lower bottom face of the cuboid-shaped diamond are square, and the side length of the square is 50-60 mm; the diamond is cut into a plurality of square base tabs with the identical or different thicknesses, and the side length of the upper bottom face and the side length of the lower bottom face of each base tab is the same as that of the upper bottom face and that of the lower bottom face of the diamond. Each square base tab is cut into a plurality of window pieces. The upper bottom face and the lower bottom face of each window piece is square or round, the thickness of each window piece is the same as that of each base tab, the side length of the bottom faces of each square base tab is 4-5 times the side length or the diameter of the bottom faces of each window piece, and equal to the sum of the side length or the diameter of the bottom faces of each window piece and the machining allowance of 1-5 mm. The sapphire machining method can effectively increase the utilization rate of a sapphire material, the use cost of the sapphire window pieces is reduced to the maximum, and the sapphire machining method can be widely used in production of the sapphire window pieces.

Description

technical field [0001] The application of the present invention belongs to the field of sapphire processing, and in particular relates to a sapphire product, a processing method thereof and an application in preparing a sapphire window. Background technique [0002] Sapphire (Sapphire) is a general term for corundum gemstones of other colors except red ruby. Its main component is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms in the form of covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has a wide optical penetration band and has good light transmission from near ultraviolet (190nm) to mid-infrared, it is widely used in optical components, infrared devices, high-strength laser lens materials and photomask materials. , with high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance and so on. Sapphire is expensive, and it is a very ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B24B7/22B23K26/38B23K26/402
CPCB28D5/04B28D5/045B23K26/38B23K2103/50B24B7/22B28D5/0005
Inventor 冯明明
Owner CHONGQING SILIAN OPTOELECTRONICS SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com