Organic light-emitting device and manufacturing method thereof
An electroluminescent device and electroluminescent technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of reducing the recombination probability of electrons and holes, the destruction of organic functional layers, and the poor film-forming properties of lithium fluoride. and other problems, to achieve the effect of reducing the injection barrier, increasing the recombination probability, and improving the conductivity
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[0034] The preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
[0035] Step S110 , sequentially forming a hole injection layer 20 , a hole transport layer 30 , a light emitting layer 40 , an electron transport layer 50 and an electron injection layer 60 on the surface of the anode 10 .
[0036] The anode 10 is indium tin oxide glass (ITO), fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide glass (AZO) or indium-doped zinc oxide glass (IZO), preferably ITO, and the thickness of the anode 10 is 50 nm to 300 nm, preferably 80 nm.
[0037] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic po...
Embodiment 1
[0051] The structure ITO / MoO prepared in this embodiment 3 / NPB / Alq 3 / Bphen / Rb 2 CO 3 :Alq 3 / RbCl / Ag organic electroluminescent device, in this embodiment and the following embodiments, " / " indicates a layer, and ":" indicates doping.
[0052] Magnetron sputtering anode on the glass substrate, the material is ITO, and then photolithography treatment, cut into the required size, followed by detergent, deionized water, acetone, ethanol, isopropanol ultrasonic 15min each, to remove the glass surface organic pollutants; after cleaning, carry out proper treatment on the conductive substrate: oxygen plasma treatment, the treatment time is 5min, the power is 30W; the thickness is 80nm, and the hole injection layer is evaporated, and the material is MoO 3 , with a thickness of 30nm; the vapor-deposited hole transport layer, made of NPB, with a thickness of 55nm; the vapor-deposited light-emitting layer, made of Alq 3 , with a thickness of 17nm; the vapor-deposited electron tran...
Embodiment 2
[0059] The structure prepared in this example is IZO / MoO 3 / TCTA / DCJTB / TAZ / RbCl:Bphen / Rb 2 CO 3 / Au organic electroluminescent devices.
[0060] Magnetron sputtering anode on the glass substrate, the material is IZO, and then photolithography treatment, cut into the required size, followed by detergent, deionized water, acetone, ethanol, isopropanol ultrasonic 15min each, to remove the glass surface organic pollutants; after cleaning, conduct appropriate treatment on the conductive substrate: oxygen plasma treatment, the treatment time is 5min, the power is 30W; the thickness is 50nm, and the hole injection layer is evaporated, and the material is MoO 3 , with a thickness of 40nm; evaporated hole transport layer, made of TCTA, with a thickness of 45nm; evaporated luminescent layer, made of DCJTB, with a thickness of 8nm; evaporated electron transport layer, made of TAZ, with a thickness of 65nm; electron injection layer Comprising a binary doped layer and a rubidium compoun...
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