Method for Integrating Power Devices and Control Devices

Abstract

The present invention relates to the technical field of integrated circuit manufacturing, and in particular to an integration method of a power device and a control device. Through the method of the present invention, the power chip and the control chip can be designed and manufactured independently of each other, ensuring their performance and cost advantages At the same time, the interconnection of the control circuit and the chip device can be completed without using wiring and conventional packaging; and by sharing the thinning and back metal process, the manufacturing cost is further reduced, and the performance of the power device is improved at the same time, and due to the thickened The metal on the back drain of the power device further reduces the on-resistance of the device. In addition, the use of metal rewiring improves the heat dissipation performance, and stops on the metal layer of the power chip through silicon vias, reducing the through-silicon vias. The aspect ratio reduces the difficulty of process realization.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for integrating power devices and control devices. Background technique [0002] Field Effect Transistors (FETs) are widely used in various electronic circuits. It is a voltage-controlled semiconductor device. It has the advantages of high input resistance (107~1015Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and wide safe working area. It has become a powerful bipolar transistor and power transistor. competitor. The manufacturing process of the control device of the field effect tube is completely different from that of the field effect tube. However, the work of the field effect tube depends on the connection of the control device. Therefore, obtaining the field effect transistor and its control device at the same time has become a technical difficulty in this field. [0003] At ...

AI Technical Summary

Problems solved by technology

However, this solution needs to place the source region of the device on the back of the silicon wafer, which is inconsistent with the conventional vertical power device where the source region of the device is placed on the front of the silicon wafer, so the existing vertical power devices cannot be applied to this solution.

And multiple chips are spread out and connected on the plane, occupying a large area

[0006] The single-chip solution is to integrate the power device and the control device in the same chip through special chip design and production. The entire process is the sum of the processes of the two devices. The device has undergone unnecessary processes and the cost is high.

Moreover, the performance compatibility of power devices and control devices is not strong, which affects the optimization of the performance of both devices

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