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CZTS nanometer array thin film solar photovoltaic cell and manufacturing method thereof

A technology of thin-film solar energy and photovoltaic cells, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of nanowire impurities, limit the large-scale preparation of nanowire arrays, and low production costs, and achieve uniform distribution and convenient large-area application , low cost effect

Active Publication Date: 2015-03-25
SHANGQIU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, among the nanowires prepared by the above two methods, the first one is in the form of dispersed powder, not in the form of nanowire arrays, and there are still certain difficulties in the application in the field of photovoltaics.
Although the second type is obtained in the form of nanowire arrays, templates are required in the preparation process, which limits the large-area preparation of nanowire arrays. At the same time, templates may also bring impurities to nanowires.
However, there is still no method that is simple in process, low in production cost, and can be used in the preparation of large-area nanowire solar cells.

Method used

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  • CZTS nanometer array thin film solar photovoltaic cell and manufacturing method thereof

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Embodiment 1

[0042] The preparation method of the CZTS nano-array thin-film solar photovoltaic cell of the present embodiment comprises the following steps:

[0043] (1) Polish the copper sheet with No. 0-6 sandpaper, and ultrasonically clean it with alcohol, acetone, and deionized water for 5 minutes; then deposit a layer of Mo on the copper sheet by magnetron sputtering, and the thickness of the Mo layer is 50 μm; A layer of zinc film with a thickness of 1 μm is sputtered on the copper sheet deposited with the Mo layer;

[0044] (2) The product of step (1) is mixed with hydrogen sulfide / oxygen mixed gas, wherein the volume percentage of hydrogen sulfide is 1%, and heated at 50°C for 16h to convert the zinc film into a zinc sulfide nanowire array; The final product is used as the working electrode, the platinum wire is used as the counter electrode, the saturated calomel electrode is used as the reference electrode, the acidic solution containing copper chloride is used as the electrolyte...

Embodiment 2

[0050] The preparation method of the CZTS nano-array thin-film solar photovoltaic cell of the present embodiment comprises the following steps:

[0051] (1) The silicon wafer is ultrasonically cleaned with 1mol / L NaOH, 1mol / L HCl solution, absolute ethanol, and deionized water in sequence; then a layer of Au is magnetron sputtered on the silicon wafer, and the thickness of the Au layer is 800nm ; A zinc film with a thickness of 1 μm was sputtered on a silicon wafer deposited with an Au layer;

[0052] (2) The product of step (1) is mixed with hydrogen sulfide / oxygen mixed gas, wherein the volume percentage of hydrogen sulfide is 30%, and heated at 60°C for 500h to convert the zinc film into a zinc sulfide nanowire array; The final product is used as the working electrode, the platinum wire is used as the counter electrode, the saturated calomel electrode is used as the reference electrode, the acidic solution containing copper chloride, tin chloride and selenous acid is used a...

Embodiment 3

[0058] The preparation method of the CZTS nano-array thin-film solar photovoltaic cell of the present embodiment comprises the following steps:

[0059] (1) Electron beam evaporates one deck ITO on the newly cut mica sheet, and the thickness of the ITO layer is 800nm; Evaporate a layer of thickness on the mica sheet after the electron beam evaporates ITO and be the zinc film of 1 μm;

[0060] (2) The product of step (1) is mixed with hydrogen sulfide / oxygen mixed gas, wherein the volume percentage of hydrogen sulfide is 50%, and heated at 60° C. for 12 hours to convert the zinc film into a zinc sulfide nanowire array; The final product is used as the working electrode, the platinum wire is used as the counter electrode, the saturated calomel electrode is used as the reference electrode, the acidic solution containing copper chloride, tin chloride and selenous acid is used as the electrolyte, and sunlight is placed on the outside of the electrolytic cell. The simulator was used...

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Abstract

The invention belongs to the field of solar photovoltaic cells, and particularly relates to a CZTS nanometer array thin film solar photovoltaic cell and a manufacturing method thereof. According to the solar photovoltaic cell of a nanometer structure, the characteristics that the diameter of nanowire arrays is small, light rays are absorbed in the axial direction of the nanowire arrays and the distance between the nanowire arrays is smaller than the wavelength of light waves are utilized at the same time, and therefore light absorption is improved; by means of the preferred orientation of the nanowire arrays, the dot matrix distortion is reduced, and the light reflection is reduced; by means of the characteristic that the specific surface area of the nanowire arrays is large, the probability of carrier generation is increased; due to the fact that carriers are conveyed in the radial direction, the probability of electron holes and electron recombination is lowered, and the photoelectric conversion efficiency of the solar photovoltaic cell is greatly improved.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic cells, in particular to a CZTS nano-array thin-film solar photovoltaic cell and a preparation method thereof. Background technique [0002] With the development of nanotechnology and the improvement of people's requirements for photoelectric conversion efficiency of solar cells, different thin-film semiconductor materials are used in the preparation of solar cells, such as single crystal silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, cadmium sulfide, cadmium Tellurium, Copper Indium Sulfur, Copper Indium Gallium Selenium, Copper Indium Gallium Selenium Sulfur, Copper Zinc Tin Sulfur, etc. Among them, copper indium gallium selenide, cadmium telluride and copper zinc selenide sulfur have received more attention because of their high light absorption coefficient, high photoelectric conversion efficiency and direct band gap semiconductors, but the first two materials are widel...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/042H01L31/18
CPCH01L31/0326H01L31/035227H01L31/042H01L31/18Y02E10/50Y02P70/50
Inventor 李立强张文星赵世华刘亚强程文静任山陈文聪李朋
Owner SHANGQIU NORMAL UNIVERSITY
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