Method for controllably removing residual optical photoresist in graphene-metal contact region

Abstract

The invention discloses a method for controllably removing residual optical photoresist in a graphene-metal contact region. The method includes the steps that an organic layer is self-assembled on the surface of graphene, an inorganic layer is deposited, and the organic layer and the inorganic layer serve as double protective layers of graphene; the double protective layers of graphene are spin-coated with a layer of photoresist, the photoresist is exposed, reversely rotated, flooded and developed, and patterns needed for manufacturing a metal electrode are formed; residual photoresist on the surface of the inorganic layer is removed through O2 plasma, the portion, in the graphene-metal contact region, of the inorganic layer is etched away through a wet method, the portion, in the graphene-metal contact region, of an organic thin film is controllably removed through organic corrosive liquid, and it is guaranteed that no residual photoresist exists on the surface of the graphene-metal contact region. The problem that the photoresist is prone to be left on the surface of graphene is solved, graphene is not damaged, the doping degree of graphene is reduced, and an established graphene field effect transistor can keep the high carrier mobility of graphene materials and the performance of a device.

Description

technical field [0001] The invention belongs to the technical field of graphene field-effect transistor manufacture, and in particular relates to a method for controllably removing residual optical photoresist in a graphene-metal contact region. Background technique [0002] As integrated circuit technology enters the nanometer scale, key technologies are approaching the physical limit dominated by quantum effects, and the difficulty and cost of the process are increasing sharply. The sustainable development of integrated circuits is facing unprecedented challenges. High speed and low power consumption are key technical bottlenecks in the development of integrated circuits, and both are related to carrier mobility. Finding materials with higher mobility to replace the existing silicon channel has become a very urgent task to further extend Moore's Law. High-mobility carbon materials represented by graphene have attracted widespread attention and have broad application prosp...

AI Technical Summary

Problems solved by technology

In the preparation process of graphene field effect transistors, in order to define graphics, it is inevitable to use photoresist on the surface of graphene. After exposure and development, a large amount of photoresist remains on the surface of graphene, which hinders the contact between metal and graphene. The introduction of additional potential barriers at the contact interface leads to a great reduction in the electrical properties of graphene, which is one of the bottlenecks that limit its further application development.

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