Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Accessing and memorizing method and accessing and memorizing device of message type DRAM (Dynamic Random Access Memory) module

A message-based memory and memory module technology, applied in static memory, response error generation, redundant code error detection, etc., can solve the problems of power loss, lack of flexibility, etc., and achieve the effect of low power consumption

Active Publication Date: 2015-02-11
HUAWEI TECH CO LTD +1
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chipkill technology achieves high reliability through wider MC bit width and larger granularity data encoding, but this technology can only be used in 4-bit wide DRAM chips in theory, lacks flexibility, and has too large granularity The data encoding causes the data it reads each time is much larger than the actual memory access request data, causing a lot of unnecessary power loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Accessing and memorizing method and accessing and memorizing device of message type DRAM (Dynamic Random Access Memory) module
  • Accessing and memorizing method and accessing and memorizing device of message type DRAM (Dynamic Random Access Memory) module
  • Accessing and memorizing method and accessing and memorizing device of message type DRAM (Dynamic Random Access Memory) module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Please refer to figure 1 , an embodiment of the present invention provides a memory access device for a message-based memory module. The device can be deployed in the peripheral control circuit of the memory module, and can also be deployed in the memory controller; the memory controller can be integrated in a central processing unit (Central Processing Unit, CPU) or integrated on a computer motherboard.

[0030] The memory module may specifically be a DIMM, and the DIMM includes multiple DRAMs. In this paper, it is assumed that the bit width of DRAM is N bits, N is equal to the nth power of 2, and n is a positive integer; the burst length (Burst Length, BL) of DRAM is Q, and Q is a positive integer, preferably Q is equal to several times of 2 Square, for example, it is equal to 4 or 8; assuming that DIMM includes (M+2) blocks of DRAM, (M×N) is the bit width of the entire memory module, because the bit width (M×N) of a computer memory module is generally 2 A number of...

Embodiment 2

[0065] Please refer to image 3 , the embodiment of the present invention also provides a memory access method of a message-based memory module. The method is executed by a peripheral control circuit or memory controller of the memory module, specifically the memory access device as described in Embodiment 1 deployed in the peripheral control circuit or memory controller. The memory module includes (M+2) blocks of dynamic random access memory (DRAM), M is equal to the m power of 2, and m is a positive integer; the memory stored in each block of DRAM can be accessed within one read and write cycle The data is called single-chip burst cluster SCBC, and the collection of data stored in all DRAMs that can be accessed in the same read and write cycle forms a memory row.

[0066] The methods include:

[0067] 210. Store the SCBC to be stored in the current read-write cycle into the corresponding DRAM and locate it in the current memory row, and the DRAM used to store the SCBC does...

Embodiment 3

[0080] The embodiment of the present invention also provides a memory control system.

[0081] In one embodiment, as Figure 4a As shown, the system includes a message memory module 310, and the memory module 310 includes a peripheral control circuit 3101 and (M+2) blocks of DRAM 3102;

[0082] Among them, M is equal to the m power of 2, and m is a positive integer; the data stored in each DRAM that can be accessed within one read and write cycle is called single-chip burst cluster SCBC, and the data stored in all DRAMs can be stored in the same The collection of data accessed during a read / write cycle forms a memory row. The memory controller can be integrated on the main board of the computer or in the CPU of the computer.

[0083] The peripheral control circuit performs the following steps:

[0084]Store the SCBC to be stored in the current read and write cycle into the corresponding DRAM and be located in the current memory row, and the DRAM used to store the SCBC does ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed in the present invention is an access device for a message-type memory module, comprising: a read-write module, configured to store SCBCs to be stored within a current read-write cycle in corresponding DRAMs; and a processing module, configured to calculate a group of error detecting codes for each SCBC in a memory row and calculate a group of error correcting codes for all the SCBCs in the memory row; wherein the read-write module is further configured to store the error detecting codes in the (M+2)th DRAM of the memory row and store the error correcting codes in the Zth DRAM of the memory row, Z is a positive integer and 1≤Z≤(M+1), and the error correcting codes in continuous (M+1) memory rows are respectively stored in different DRAMs. The embodiments of the present invention further provide a corresponding method. According to the technical solution of the present invention, the SCBCs are used as a basic read-write unit to carry out fine-grained coding protection and support diverse-grained access, so that any multi-bit errors in single DRAMs can be corrected.

Description

technical field [0001] The invention relates to the field of communication technology, in particular to a memory access method and device for a message-type memory module. Background technique [0002] In the operation of a computer system, the reliability of the memory plays a decisive role. On the one hand, as the number of memory configured in the system increases, the failure rate of the memory system will increase exponentially; With the introduction of voltage working mode technology, the possibility of memory errors will increase, and the number of errors will increase. [0003] Error Checking and Correcting (ECC) memory is a commonly used memory reliability solution. ECC memory, that is, a memory module with ECC check code, its basic idea is to protect data with the memory module bit width as the basic unit. Taking the memory module bit width as 64 bits as an example, 64 bits are written each time At the same time as the data, the 8-bit check digit is calculated fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42
CPCG06F11/08G06F11/1044G06F11/108G06F11/1068G11C29/52
Inventor 高翔李冰单书畅胡瑜
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com