Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single chip structured programmable logic device with resistance random access memory (RAM) module

A random access memory and memory module technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of judgment circuit misjudgment, increase chip area, reduce circuit operating speed, etc., and achieve low cost, small size, and high efficiency. The effect of low consumption

Inactive Publication Date: 2011-08-31
FUDAN UNIV
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of method (1) is: when most soft errors occur, the judgment circuit will get wrong judgments, resulting in FPGA configuration errors
The disadvantage of the (2) method is: ECC can only correct errors when the number of units with soft errors is small
At the same time, the common technical defects of the two methods are: the programmable logic chip requires a large number of decision circuits and CRC / ECC circuits, which increases the chip area and reduces the circuit operating speed.
According to the storage principle of SRAM and Flash, Flash memory and SRAM are easy to generate SER under radiation conditions; at the same time, Flash memory uses floating gate technology. In the existing semiconductor manufacturing technology, it is difficult to integrate Flash memory and SRAM in the same chip. of
therefore, figure 1 The programmable logic device 100 shown is difficult to implement a single-chip structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single chip structured programmable logic device with resistance random access memory (RAM) module
  • Single chip structured programmable logic device with resistance random access memory (RAM) module
  • Single chip structured programmable logic device with resistance random access memory (RAM) module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0016] figure 2 Shown is a schematic structural diagram of a certain embodiment of the programmable logic device provided by the present invention. like figure 2As shown, the programmable logic device 100 has a single-chip structure, which includes an address circuit 310, a comparison unit 320, an RRAM module 370, an SRAM module 380, and a logic array 390, and the above parts are integrated and manufactured through a single-chip design. The address circuit 310 is respectively connected to the RRAM module 370 and the SRAM module 380 through the address line AL. After the address circuit 310 sends an address signal through the AL, it can correspond to a column of the RRAM module 370 and a column of the SRAM module 380 at the same time. The RRAM module 370 is con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of programmable logic device and particularly discloses a programmable logic device. The programmable logic device comprises an address circuit module (310), a comparison unit (320), an SRAM (Static Random Access Memory) module (380), a logic array (390) and a resistance RAM module (370) which is used for overcoming the soft error rate in the SRAM module, wherein the resistance RAM module realizes single chip integration with the address circuit module, the comparison unit, the SRAM module and the logic array. The programmable logic device not only can overcome the SER (Symbol Error Rate) problem in the SRAM, but also has the characteristics of single chip, small size, radiation resistance, low power consumption and low cost.

Description

technical field [0001] The invention belongs to the technical field of programmable logic devices, and in particular relates to a programmable logic device which overcomes the soft error rate (Soft Error Rate, SER) problem in a volatile (Volatile) memory module through a nonvolatile (Nonvolatile) memory module, especially relates to The non-volatile memory is a resistive RAM and a single-chip programmable logic device. Background technique [0002] PLD is the abbreviation of Programmable Logic Device (Programmable Logic Device), and the generalized programmable logic device also includes FPGA (Field Programmable Gate Array, Field Programmable Gate Array) and CPLD (Complex Programmable Logic Device, complex programmable logic device). Programmable logic can complete the function of any digital device, up to a high-performance CPU, down to a simple 74 circuit, can be realized with PLD. A programmable logic device is like a blank sheet of paper or a pile of building blocks. En...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C11/00G11C11/413
Inventor 林殷茵陈凤娇薛晓勇
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products