Preparation method of gallium nitride nanowires

A technology of gallium nitride nanowires and gallium sources, which is applied in nanotechnology, nanotechnology, nitrogen-metal/silicon/boron binary compounds, etc., can solve the problem of affecting the quality of GaN nanowires, insufficient mixing of gallium sources, gallium source Difficult to weigh and other problems, to avoid the problem of not easy to grind fully or difficult to weigh, the preparation process is simple and easy, and the production cost is low.

Inactive Publication Date: 2015-01-28
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the above-mentioned GaN nanowire preparation process, the gallium source is not easy to weigh, easy to deliquescence, the concentration of gallium ions in a single gallium source is low, and the mixing of gallium sources is not uniform enough, which affects the quality of the final GaN nanowire, etc. Technical problem and provide a kind of preparation method of gallium nitride nanowire

Method used

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  • Preparation method of gallium nitride nanowires
  • Preparation method of gallium nitride nanowires
  • Preparation method of gallium nitride nanowires

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Embodiment 1

[0037] A preparation method of gallium nitride nanowires, specifically comprising the following steps:

[0038] (1), preparation of mixed gallium source;

[0039] GaN with a purity of 99.999% and Ga with a purity of 99.999% 2 o 3 According to mass ratio Ga 2 o 3 : GaN is mixed and ground at 2:1 to obtain a mixed gallium source with a particle size of 700-900nm and a length of about 2μm;

[0040] (2) Growth of gallium nitride nanowires

[0041] Put the mixed gallium source in step (1) into a small porcelain boat, put the Si substrate material coated with a catalyst Ni layer into a quartz glass tube, then put the small porcelain boat into the quartz glass tube, and ensure that the mixed gallium The distance between the center of the source and the center of the Si substrate material coated with the catalyst Ni layer is 11cm, then put the quartz glass tube into the tube furnace, and align the small porcelain boat with the center of the tube furnace;

[004...

Embodiment 2

[0056] Just replace the Si substrate material coated with the catalyst Ni layer in step (2) with the Si substrate material coated with the catalyst Au layer, and other conditions remain the same. The light yellow substance obtained on the surface of the substrate material is gallium nitride nanowire;

[0057] The Si substrate material coated with a catalyst Au layer described in the above step (2), that is, the Si substrate material coated with a catalyst Au layer with a thickness of 3nm in the orientation (100) direction;

[0058] The catalyst Au layer coated in the orientation (100) direction is prepared by electron beam evaporation in the orientation (100) direction of the Si substrate material, and its preparation process specifically includes the following steps:

[0059] Using pure metal Ni as the evaporation source, an electron beam evaporation method is used to electrodeposit a layer of Au on the Si substrate material oriented in the (100) direction to obtain a Si subs...

Embodiment 3

[0064] Just change the center of the mixed gallium source in step (2) and the center of the Si substrate material coated with the catalyst Ni layer to 10cm, and other conditions remain unchanged, the same as in Example 1, and finally the Si substrate material coated with the catalyst Ni layer The light yellow substance obtained on the surface of the GaN nanowire is GaN.

[0065] Quanta FEG is used to scan the gallium nitride nanowires obtained above, and the obtained scanning electron microscope picture is as follows Figure 5 shown, from Figure 5 It can be seen that the distribution of GaN nanowires is sparse, the thickness is uneven, the growth is disordered, and a sheet-like structure appears.

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Abstract

The invention discloses a preparation method of gallium nitride nanowires. The method comprises the steps of loading Ga2O3 and GaN as a mixed gallium source into a small porcelain boat, placing a Si substrate material plated with a catalyst Ni layer or Au layer into a quartz tube, and placing the small porcelain boat into the quartz tube, wherein a distance from the center of the mixed gallium source to the center of the Si substrate material is 10-20cm; then placing the quartz tube into a tube furnace while enabling the small porcelain boat to be aligned with the center of the tube furnace, heating to 1100 DEG C at 30-35 DEG C / min, introducing Ar gas at 20sccm during heating and keeping for 31-37min, stopping introducing the Ar gas, introducing NH3 gas at 15-45sccm and keeping for 15-30min, stopping introducing the NH3 gas and introducing Ar gas again, and cooling naturally to room temperature, wherein faint yellow substances formed on the surface of the Si substrate material are gallium nitride nanowires. The gallium nitride nanowires prepared by the method have high crystal quality, and the preparation process has good controllability.

Description

technical field [0001] The invention relates to a method for preparing gallium nitride nanowires, which belongs to the field of preparation of nanometer materials. Background technique [0002] So far, in many reports on the growth of GaN nanowires by chemical vapor deposition (CVD), most of them use metal gallium, gallium oxide and gallium chloride as gallium sources, and some studies have found that different single gallium sources are mixed, such as Ga 2 o 3 / Ga and Ga / GaCl 3 , it is easier to grow high-quality GaN nanowires. [0003] However, when metal gallium is used as the gallium source, because metal gallium is mostly in block or liquid state, there are problems of insufficient grinding or inconvenient weighing in liquid state. while using Ga 2 o 3 When used as a gallium source, the problem of low concentration of Ga ions in the carrier gas occurs. Using GaCl 3 Because of its unstable physical properties, it is easy to fume in the air and it is inconvenient ...

Claims

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Application Information

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IPC IPC(8): C23C16/34C01B21/06B82Y30/00
Inventor 郑学军程宏斌李佳吴东旭罗晓菊
Owner UNIV OF SHANGHAI FOR SCI & TECH
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