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Preparation method of piezoelectric ceramic transducer (PZT) thick film with micro structure

A lead zirconate titanate and microstructure technology is applied in the field of preparation of lead zirconate titanate PZT thick films with microstructures, which can solve the problems of surface roughness, difficulty in preparation and patterning, and high equipment cost, and achieves improved surface flatness and Density, overcoming difficult clean etching, high patterning quality

Inactive Publication Date: 2015-01-28
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Compared with PZT thin films, it is more difficult to prepare and pattern PZT thick films with a thickness of more than 1 micron
[0003] At present, the preparation method of PZT thick film is mainly the 0-3 method. Compared with screen printing and other methods, it has the advantages of low crystallization temperature and better film quality. However, the preparation of PZT thick film by the 0-3 method still has at least the following problems: Disadvantages: The prepared PZT thick film has low film density and rough surface.
Since the wet etching of PZT contains highly corrosive acid, it has poor compatibility with the manufacturing process of semiconductors and MEMS, and the wet etching of PZT thick film is difficult, and the pattern lateral corrosion is more serious.
Dry etching has the disadvantages of high equipment cost, difficult control of the end point, and easy damage to other thin film layers.
In addition, since there is a large amount of PZT powder in the PZT thick film prepared by the 0-3 method, it is easy to leave a large amount of PZT powder regardless of wet or dry etching.

Method used

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  • Preparation method of piezoelectric ceramic transducer (PZT) thick film with micro structure
  • Preparation method of piezoelectric ceramic transducer (PZT) thick film with micro structure
  • Preparation method of piezoelectric ceramic transducer (PZT) thick film with micro structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] figure 1 It is a flow chart of the method for preparing a PZT thick film provided in Example 1 of the present invention. Figure 2-6 A schematic diagram of the preparation process for each step in the preparation process is provided. Below, according to figure 1 and combine Figure 2-Figure 6 , the preparation method of PZT thick film with microstructure is described in detail.

[0042] Such as figure 1 As shown, the preparation method specifically includes the following steps:

[0043] Step 101, cleaning the substrate.

[0044] Specifically, the substrate is put into an acid cleaning solution or an alkaline cleaning solution for cleaning, and then deionized water is used to rinse the substrate.

[0045] The substrate can be any one of silicon substrate, gallium nitride substrate, sapphire substrate, ruby ​​substrate, quartz substrate, gallium arsenide substrate, silicon carbide substrate, germanium substrate, diamond substrate Substrate; or any one of the above-...

Embodiment 2

[0063] In this embodiment, the method provided in Example 1 is used to prepare a PZT thick film with a microstructure, and the preparation process of the PZT thick film is specifically as follows:

[0064] Add the PZT powder to the PZT colloid, and mix it into a slurry by ultrasonic dispersion; place the mixed slurry for 1 day, and then remove the coarse particles larger than 250nm after slurry precipitation; then remove the slurry after removing the coarse particles larger than 250nm Concentrating is carried out, and the concentrated slurry is left still for 5 days to form a PZT slurry containing fine powder.

[0065] Prepare a 0.01μm zinc oxide sacrificial layer on the cleaned silicon substrate by radio frequency sputtering; apply a positive photoresist on the surface of the zinc oxide sacrificial layer, and use the negative plate of the PZT thick film pattern to be prepared for positive alignment Photoresist photolithography exposure and development; the silicon substrate a...

Embodiment 3

[0069] The embodiment of the present invention uses the method provided in Example 1 to prepare a PZT thick film with a microstructure, and the preparation process of the PZT thick film is specifically:

[0070] Add the PZT powder to the PZT colloid, and mix it into a slurry by ultrasonic dispersion; place the mixed slurry statically for 15 days, and then remove the coarse particles larger than 250nm after the slurry is precipitated; then remove the slurry after removing the coarse particles larger than 250nm Concentrating is carried out, and the concentrated slurry is left still for 20 days to form a PZT slurry containing fine powder.

[0071] Clean the potassium nitride substrate; prepare a zinc oxide sacrificial layer with a thickness of 0.01 μm on the potassium nitride substrate; repeat.

[0072] Using the prepared PZT slurry, a PZT wet film was prepared on a substrate with a patterned zinc oxide sacrificial layer through a coating process; at a temperature of 500 ° C, th...

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Abstract

The invention provides a preparation method of a piezoelectric ceramic transducer (PZT) thick film with a micro structure. The preparation method is characterized by comprising the following steps: preparing a graphical zinc oxide sacrificial layer on the surface of a substrate; coating the zinc oxide sacrificial layer with PZT slurry, performing pre-crystallization treatment for 1-60 minutes at 200-500 DEG C; at 600-1000 DEG C, performing crystallization treatment for 1-180 minutes; and putting the substrate, surface of which is coated with the PZT slurry, into a corrosive liquid, and then stripping to obtain the PZT thick film with the micro structure. By adopting a process of improving the slurry and the thermal treatment, the preparation method disclosed by the invention can be used for obviously improving the surface evenness and the density of the PZT thick film. And meanwhile, by virtue of a stripping technology that adopts the zinc oxide as the sacrificial layer, the problem that the PZT thick film is difficult to etch completely can be overcome.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a preparation method of a lead zirconate titanate PZT thick film with a microstructure. Background technique [0002] Lead zirconate titanate (Piezoelectric Ceramic Transducer, PZT) film has excellent ferroelectric, piezoelectric, and pyroelectric properties, and is widely used in uncooled infrared detectors, non-volatile ferroelectric memories, micro sensors and micro implementations. device etc. Compared with PZT thin films, it is more difficult to prepare and pattern PZT thick films with a thickness of more than 1 micron. [0003] At present, the preparation method of PZT thick film is mainly the 0-3 method. Compared with screen printing and other methods, it has the advantages of low crystallization temperature and better film quality. However, the preparation of PZT thick film by the 0-3 method still has at least the following problems: Disadvantages: The prep...

Claims

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Application Information

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IPC IPC(8): C04B35/491C04B35/622
Inventor 李俊红任伟汪承灏
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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