Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetron sputtering preparation method of vanadium oxide

A technology of magnetron sputtering and vanadium oxide thin film, which is applied in sputtering coating, ion implantation coating, metal material coating process, etc., can solve the problems of increasing process difficulty, reducing process repeatability, etc. High rate, low substrate temperature, uniform sputtering effect

Inactive Publication Date: 2014-12-17
常州博锐恒电子科技有限公司
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing reactive sputtering process, in order to make the deposited vanadium oxide film have high value and low room temperature resistance, it is not only necessary to precisely control the process parameters of the deposited film to form a vanadium oxide film of appropriate composition, but also to Long-term thermal annealing at high temperature, which not only increases the difficulty of the process, but also reduces the repeatability of the process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetron sputtering preparation method of vanadium oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] 1) Clean the surface of the silicon wafer to remove the polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. The process is as follows: mix concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 3:1 to prepare a cleaning solution, and clean the silicon wafer here Soak in the solution for 40 minutes, rinse the silicon chip with deionized water, then mix ammonia water, hydrogen peroxide and deionized water at a volume ratio of 1:40:50, soak the silicon chip for 30 minutes, and then rinse with deionized water. A layer of silicon oxide film is first deposited on the silicon wafer by PECVD method, the background vacuum is 4.5×10-1Pa, the working pressure is 4.3Pa, the substrate temperature is 150°C, the working gas is nitrous oxide and silane, and the gas flow rate 12ml / min and 38ml / min respectively, the deposition time is 10 minutes, and the thickness of the silicon dioxide layer is about 1000nm;

[0013] 2) Using the m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a magnetron sputtering preparation method of vanadium oxide, and belongs to the technical field of film preparation. The preparation method comprises the following steps: step one, washing the surface of a silicon chip; step two, depositing a layer of silicon oxide film on the surface of the silicon chip; step three, utilizing target materials having the advantages of high utilization rate and uniform sputtering on film to carry out magnetron sputtering to deposit a vanadium film; wherein the technology conditions are as follows: the bottom vacuum is 3*10<-4> Pa, the argon / oxygen ratio is 100:1 to 140:1, the sputtering power is 150 W to 240 W, and the substrate temperature is 25 to 200 DEG C. The preparation method has the advantage that a vanadium oxide film having a high resistance temperature coefficient and a low room temperature resistance can be prepared just through changing the sputtering technological conditions without carrying out a high temperature hot treatment, and thus the film plating technology is simplified.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering coating, in particular to a method for preparing a vanadium oxide thin film. Background technique [0002] Vanadium dioxide thin film has the characteristics of phase transition from low-temperature semiconductor phase to high-temperature metal phase, accompanied by sudden changes in resistivity, magnetic susceptibility, light transmittance and reflectivity, so it has many applications in the fields of microelectronics and optoelectronics. Because vanadium is a polyvalent metal, it can combine with oxygen to form a variety of oxides, especially vanadium oxide mixed-phase polycrystalline film based on vanadium dioxide does not have temperature phase transition characteristics, but because it has extremely high The temperature coefficient of resistance can reach more than 5-10 times that of ordinary metal thin films. Therefore, the vanadium oxide mixed-phase polycrystalline film based ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/08
Inventor 张磊
Owner 常州博锐恒电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com