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A high-power infrared light-emitting diode

An infrared light-emitting and diode technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of peeling off of oxides and metal mirrors and epitaxial layers, poor thermal conductivity of oxide materials, and poor heat dissipation performance of chips

Active Publication Date: 2017-04-26
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Under the condition of adopting the reverse polarity chip structure, in order to prevent factors such as metal diffusion, oxide is usually evaporated between the metal mirror and the epitaxial layer as a metal barrier layer, and the thermal conductivity of the oxide material is poor, which makes the heat dissipation performance of the chip poor. Poor, with the increase of chip power, the problem of heat dissipation becomes more and more prominent; moreover, due to the evaporation process of oxide, there are defects such as peeling off of oxide and metal mirror and epitaxial layer

Method used

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  • A high-power infrared light-emitting diode
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  • A high-power infrared light-emitting diode

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Embodiment 1

[0059] Such as figure 1 As shown, a high-power infrared light-emitting diode disclosed by the present invention includes a silicon substrate 1, a metal reflector 2, a transition layer 3, a high thermal conductivity medium layer 4, an epitaxial protective layer 5, and an epitaxial light-emitting structure; the epitaxial light-emitting structure includes an active Layer 7, first-type conductive layer 8 and second-type conductive layer 6.

[0060] A first-type conductive layer 8 is arranged on one side of the active layer 7, a first electrode 9 is arranged on the first-type conductive layer 8, a second-type conductive layer 6 is arranged on the other side, and an epitaxial protective layer 5 is arranged on the second-type conductive layer 6 .

[0061] Such as figure 2 As shown, the epitaxial protective layer 5 is composed of a first epitaxial protective layer 5a and a second epitaxial protective layer 5b, the first epitaxial protective layer 5a is in contact with the second-ty...

Embodiment 2

[0081] The difference from Embodiment 1 is: a method for manufacturing a high-power infrared light-emitting diode, comprising the following steps:

[0082] one, such as image 3 In the shown epitaxial structure, on the surface of the substrate 13 from bottom to top, there are first type conductive layer 8 , active layer 7 , second type conductive layer 6 , and epitaxial protective layer 5 . The epitaxial protection layer 5 is composed of two parts, a first epitaxial protection layer 5a and a second epitaxial protection layer 5b. Compared with the first embodiment, the epitaxial structure is not provided with the corrosion barrier layer 12 .

[0083] The substrate 13 is a GaAs substrate. The first-type conductive layer 8 is made of AlGaInP group III-V compound material, and has a thickness of 9 μm. The active layer 7 adopts a quantum well structure composed of AlGaInAs and AlGaAs two materials alternately, the logarithm of alternate composition is 10 pairs, and the light emi...

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Abstract

The invention discloses a high-power infrared light emitting diode. The high-power infrared light emitting diode comprises an extension light emitting structure, a substrate and a high-heat-conduction dielectric layer, wherein the high-heat-conduction dielectric layer is arranged on one side of the extension light emitting structure, the substrate is arranged on the high-heat-conduction dielectric layer, and the high-heat-conduction dielectric layer is arranged between the extension light emitting structure and the substrate, and heat generated by the high-heat-conduction dielectric layer is guided to the substrate. The high-power infrared light emitting diode is good in heat radiation effect, and light emitting efficiency is improved. Besides, the high-power infrared light emitting diode is stable in structure and less prone to being detached.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a high-power infrared light-emitting diode. Background technique [0002] Infrared light-emitting diodes have the characteristics of low power consumption, small size and high reliability, and are widely used in technical fields such as communication, measurement and control, and remote sensing devices. In the prior art, the infrared light-emitting diode mainly adopts the liquid phase epitaxy method to grow the heterojunction as the active layer, and the infrared diode grown by the method has a low internal quantum efficiency, making it difficult to break through in power. [0003] The epitaxial structure with multiple quantum wells is grown by metal organic compound vapor phase epitaxy, which can achieve higher internal quantum efficiency. However, the external quantum efficiency of near-infrared light-emitting diodes is low due to the low absorption rate of the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/64H01L33/00
CPCH01L33/0095H01L33/642H01L33/647H01L2933/0075
Inventor 林志伟陈凯轩张永杨凯蔡建九白继锋卓祥景姜伟刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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