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A kind of preparation method of high tuning ratio bmnt film material

A thin-film material and harmonic rate technology, applied in the field of BMNT thin-film material preparation, can solve the problems of high driving voltage and low tuning rate, and achieve the effects of improving dielectric properties, improving dielectric tuning rate, and enhancing polarization.

Inactive Publication Date: 2016-06-29
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the high driving voltage of existing tuning materials and the shortcomings of low tuning rate, and provide a new method for preparing BMNT film materials with high tuning rate

Method used

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  • A kind of preparation method of high tuning ratio bmnt film material
  • A kind of preparation method of high tuning ratio bmnt film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of target material

[0028] Using Bi with a purity of 99.99% 2 o 3 ,MgO,Nb 2 o 5 and TiO 2 oxides, Bi was prepared by a traditional solid-state reaction method 1.5 Mg 0.5 Nb 0.5 Ti 1.5 o 7 (BMNT) ceramic target with a relative density greater than 95%.

[0029] (2) Cleaning the substrate

[0030] The Si substrate with the Pt electrode attached to the surface is put into an organic solvent acetone for ultrasonic cleaning, rinsed with deionized water and dried in a nitrogen stream; the substrate can be a silicon substrate, an alumina substrate and a conductive glass substrate piece.

[0031] (3) Preparation of film

[0032] (a) Pump the background vacuum of the magnetron sputtering system to 6.0×10 -6 Torr, then heat the Pt-Si substrate to 450°C;

[0033] (b) with high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen is 4:1; the sputtering pressure is 10mTorr, the sputtering power is 150W, and the BMNT fil...

Embodiment 2

[0039] The preparation process of Example 2 is the same as that of Example 1, except that the thickness of the deposited film is 300 nm. In Example 2, when the driving electric field is 1.2 MV / cm, the tuning rate is 36%.

Embodiment 3

[0041] The preparation process of Example 3 is the same as that of Example 1, except that the thickness of the deposited film is 100 nm. In Example 3, when the driving electric field is 1.2MV / cm, the tuning rate is 29%.

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Abstract

The invention discloses a preparation method of a high tuning rate BMNT thin film material: firstly, Bi 2 o 3 ,MgO,Nb 2 o 5 and TiO 2 , using the traditional solid-state reaction method to prepare Bi 1.5 Mg 0.5 Nb 0.5 Ti 1.5 o 7 Abbreviated as BMNT ceramic target; then prepare a BMNT film with a thickness of 100-300nm by magnetron sputtering; then anneal in an atmosphere furnace at 700°C, and finally prepare a metal electrode on the BMNT film. The present invention optimizes the tunability of the bismuth-based film by doping titanium ions into the bismuth-based material. Under the driving voltage of 1MV / cm, its tuning rate reaches 35%, which is better than that of the BMN film under the same conditions (25 %), the dielectric tuning rate has been significantly improved.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, and in particular relates to a preparation method of a high tuning rate BMNT thin film material. Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave tuning devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. Microwave dielectric tunable materials are widely used in microwave tunable components, such as phase shifters, resonators and filters on phased array antennas. In recent years, bismuth-based cubic pyrochlore materials have received extensive attention due to their excellent diele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李玲霞许丹于士辉董和磊金雨馨
Owner TIANJIN UNIV
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