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Preparation method for BMNT film material with high tunability

A technology of thin film material and harmonic ratio, which is applied in the field of preparation of BMNT thin film materials, can solve the problems of high driving voltage and low tuning rate, and achieve the effect of improving dielectric properties, improving dielectric tuning rate, and enhancing polarization

Inactive Publication Date: 2014-10-08
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the high driving voltage of existing tuning materials and the shortcomings of low tuning rate, and provide a new method for preparing BMNT film materials with high tuning rate

Method used

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  • Preparation method for BMNT film material with high tunability
  • Preparation method for BMNT film material with high tunability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of target material

[0028] Using Bi with a purity of 99.99% 2 o 3 ,MgO,Nb 2 o 5 and TiO 2 oxides, Bi was prepared by a traditional solid-state reaction method 1.5 Mg 0.5 Nb 0.5 Ti 1.5 o 7 (BMNT) ceramic target with a relative density greater than 95%.

[0029] (2) Cleaning the substrate

[0030] The Si substrate with the Pt electrode attached to the surface is put into an organic solvent acetone for ultrasonic cleaning, rinsed with deionized water and dried in a nitrogen stream; the substrate can be a silicon substrate, an alumina substrate and a conductive glass substrate piece.

[0031] (3) Preparation of film

[0032] (a) Pump the background vacuum of the magnetron sputtering system to 6.0×10 -6 Torr, then heat the Pt-Si substrate to 450°C;

[0033] (b) with high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen is 4:1; the sputtering pressure is 10mTorr, the sputtering power is 150W, and the BMNT fil...

Embodiment 2

[0039] The preparation process of Example 2 is the same as that of Example 1, except that the thickness of the deposited film is 300 nm. In Example 2, when the driving electric field is 1.2 MV / cm, the tuning rate is 36%.

Embodiment 3

[0041] The preparation process of Example 3 is the same as that of Example 1, except that the thickness of the deposited film is 100 nm. In Example 3, when the driving electric field is 1.2MV / cm, the tuning rate is 29%.

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Abstract

The invention discloses a preparation method for a BMNT film material with high tunability. The preparation method is as follows: firstly, preparing Bi1.5Mg0.5Nb0.5Ti1.5O7 (BMNT ceramic target for short) by adopting Bi2O3, MgO, Nb2O5 and TiO2 by virtue of a conventional solid-phase reaction method; preparing a BMNT film with thickness of 100-300nm by virtue of a magnetron sputtering method; annealing at 700 DEG C in an atmosphere furnace, and finally preparing a metal electrode on the BMNT film. By doping titanium ions into a bismuth-based material, the tunability of the bismuth-based film is optimized; under drive voltage of 1MV / cm, the tunability reaches 35% which is superior to tunability (25%) of the BMN film under the same condition, indicating that the dielectric tunability is obviously improved.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, and in particular relates to a preparation method of a high tuning rate BMNT thin film material. Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave tuning devices with fast response speed, small size, wide frequency band, high sensitivity and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. Microwave dielectric tunable materials are widely used in microwave tunable components, such as phase shifters, resonators and filters on phased array antennas. In recent years, bismuth-based cubic pyrochlore materials have received extensive attention due to their excellent diele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 李玲霞许丹于士辉董和磊金雨馨
Owner TIANJIN UNIV
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