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Single-chip three-axis anisotropic magnetoresistive sensor and manufacturing method thereof

An anisotropic magnetic and magnetic sensor technology, applied in the field of magnetic sensors, can solve problems such as difficult process stability, mass production, and low reliability, and achieve good matching, improve reliability, save layout area and process manufacturing costs Effect

Active Publication Date: 2018-01-26
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, vertical packaging has brought many technical difficulties to both the chip manufacturing process and the packaging process. It is difficult to stabilize the process and mass production, and the reliability is not high.

Method used

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  • Single-chip three-axis anisotropic magnetoresistive sensor and manufacturing method thereof
  • Single-chip three-axis anisotropic magnetoresistive sensor and manufacturing method thereof
  • Single-chip three-axis anisotropic magnetoresistive sensor and manufacturing method thereof

Examples

Experimental program
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Effect test

no. 1 example

[0075] refer to figure 1 , the manufacturing method of the single-chip three-axis anisotropic magnetoresistive sensor comprises:

[0076] Step S11, providing a substrate, the surface of the substrate is located in a plane determined by the X direction and the Y direction, and the X direction and the Y direction are perpendicular to each other;

[0077] Step S12, etching the surface of the substrate to form grooves in the substrate;

[0078] Step S13, forming a magnetic flux concentrator on the side wall of the groove;

[0079] Step S14, forming a first dielectric layer, the first dielectric layer fills the groove and covers the magnetic flux concentrator and the surface of the substrate;

[0080] Step S15, forming a first magnetic sensor, a second magnetic sensor and a third magnetic sensor on the first medium layer, the detection direction of the first magnetic sensor is the X direction, and the detection direction of the second magnetic sensor is the Y direction, the dete...

no. 2 example

[0094] refer to Figure 9 , providing a base that only includes a semiconductor substrate 300 . The semiconductor substrate 300 can be various conventional semiconductor substrates, for example, it can be a silicon substrate with crystal orientation , and its doping type is not limited, and can be intrinsic, N-type doped or P-type doped. Miscellaneous.

[0095] A silicon oxide layer 301 is formed on the semiconductor substrate 300, the formation method of the silicon oxide layer 301 may be thermal oxidation or chemical vapor deposition (CVD), and its thickness may be between.

[0096] Afterwards, the silicon oxide layer 301 and the semiconductor substrate 300 can be etched in deep grooves by conventional photolithography and etching methods in the microelectronics processing technology. The etching process can be, for example, plasma etching or reactive ion etching, resulting in A groove whose extending direction is perpendicular to the surface of the semiconductor substra...

no. 3 example

[0101] refer to Figure 11 , providing a base that only includes a semiconductor substrate 400 . The semiconductor substrate 400 can be various conventional semiconductor substrates, for example, it can be a silicon substrate with crystal orientation , and its doping type is not limited, and can be intrinsic, N-type doped or P-type doped. Miscellaneous.

[0102] A silicon oxide layer 401 is formed on the semiconductor substrate 340, the formation method of the silicon oxide layer 401 may be thermal oxidation or chemical vapor deposition (CVD), and its thickness may be between.

[0103] After that, the silicon oxide layer 401 can be patterned by conventional photolithography and etching methods in the microelectronic processing technology to form the pattern of the groove; after that, the patterned silicon oxide layer 401 can be used as a mask to The semiconductor substrate 400 is subjected to wet etching. For example, a 5-20% tetramethylammonium hydroxide (TMAH) solution m...

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Abstract

The invention provides a single-chip three-axis anisotropic magnetoresistive sensor and a manufacturing method of the single-chip three-axis anisotropic magnetoresistive sensor. The sensor comprises a substrate, a magnetic flux concentrator, a first medium layer, a first magnetic sensor, a second magnetic sensor and a third magnetic sensor, wherein the surface of the substrate is located in the plane determined by the X direction and the Y direction and is provided with an inward-concave groove; the magnetic flux concentrator is located on the side wall of the groove; the groove is filled with the first medium layer, and the surface of the magnetic flux concentrator and the surface of the substrate are covered with the first medium layer; the first magnetic sensor is located on the first medium layer, and the detection direction is the X direction; the second magnetic sensor is located on the first medium layer, and the detection direction is the Y direction; the third magnetic sensor is located on the first medium layer, and the detection direction is located in the plane determined by the X direction and the Y direction; the third magnetic sensor and the magnetic flux concentrator form a Z-direction magnetic sensor with the Z direction as the detection direction. The single-chip three-axis anisotropic magnetoresistive sensor is simple in structure, does not need vertical packaging and is suitable for mass industrial production, and the manufacturing method of the single-chip three-axis anisotropic magnetoresistive sensor is matched with a traditional microelectronic process well.

Description

technical field [0001] The invention relates to magnetic sensor technology, in particular to a single-chip three-axis anisotropic magnetoresistance sensor and a manufacturing method thereof. Background technique [0002] Anisotropic magnetoresistive (AMR) sensor is a new type of magnetoresistance effect sensor in modern industry, AMR sensor is becoming more and more important, especially in the latest smartphones, as well as parking sensors, angle sensors, automatic braking in the automotive industry System (ABS) sensors and tire pressure sensors are widely used. [0003] In addition to the anisotropic magnetoresistive (AMR) sensor, the current main technical branches of magnetic sensors include Hall sensor, giant magnetic sensor (GMR), tunnel junction magnetic sensor (TMR), etc. The sensitivity of the sensor is much higher, and the technology is more mature than GMR and TMR, so the application of anisotropic magnetoresistive (AMR) sensor is more extensive than that of othe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12G01R33/09
Inventor 闻永祥范伟宏王平刘琛季锋邹光祎
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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