Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for ultrathin flexible crystalline silicon battery

A crystalline silicon battery, flexible technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of low attenuation resistance, few development units, and large efficiency attenuation, so as to reduce production costs, reduce the amount of soldering tape, reduce Effect of component weight

Active Publication Date: 2014-09-03
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The earliest solar cell used in the international aerospace field was N-type crystalline silicon cells, but after high-energy radiation in space, the efficiency attenuated and the stability was lower than that of P-type crystalline silicon cells. P-type crystalline silicon cells became the first choice for space applications. Later, arsenic A breakthrough in the preparation of gallium chloride, and replaced the P-type battery
Thin-film solar cell components such as amorphous silicon and copper indium gallium selenide have low attenuation resistance, and the efficiency attenuation is relatively large after space irradiation tests; the preparation process of gallium arsenide is extremely difficult, the price of cell components is too high, and there are few international research and development units

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for ultrathin flexible crystalline silicon battery
  • Preparation method for ultrathin flexible crystalline silicon battery
  • Preparation method for ultrathin flexible crystalline silicon battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] According to the preparation method of ultra-thin flexible high-efficiency crystalline silicon battery, the present invention uses P-type CFZ single crystal silicon as the substrate, and the specific process flow is as follows:

[0037] The preparation method of the ultra-thin flexible high-efficiency crystalline silicon battery comprises the following steps:

[0038] (1) Make the resistivity 3~5Ω﹒ cm P-type CFZ single crystal silicon wafer cut into 125×125 mm with a thickness of 90-120 μm 2 or 156×156mm2 Silicon wafer;

[0039] (2) Clean and texture the cut silicon wafer, and prepare a PN junction with a square resistance of 65-80 Ω / □ on the silicon wafer through a two-step high-temperature diffusion method; the parameters of the two-step high-temperature diffusion method are: The diffusion temperature of the first step is 770-800°C, the diffusion time is 10-20min, the second-step diffusion temperature is 800-850°C, the diffusion time is 15-25min, and the annealing t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method for an ultrathin flexible crystalline silicon battery. In the method, a CFZ silicon chip, an MCZ silicon chip or an FZ silicon chip is introduced as a substrate, a texturing sheet with a thickness less than 100 [mu]m is prepared through texturing thinning, a PN junction is prepared by use of a routine high temperature diffusing method, after cleaning, Al2O3 is plated through a microwave type flat PECVD to be taken as a back-surface passivating film, after the front surface and the back surface of the silicon chip is plated with a SiNx reflection reduction film and a protective film, an electrode contact window is opened by use of a laser film opening method, a novel electrode structure pattern is introduced, through process improvement, an aluminum back conducting layer whose aluminum slurry thickness is very small, a front electrode and a back electrode are prepared by use of a screen printing method, the ultrathin high-efficiency crystalline silicon battery with excellent electrical performance is formed through sintering, and a miniaturized battery which facilitates assembly packaging and has high reliability is formed through cutting by use of a laser cutting method. According to the ultrathin flexible crystalline silicon battery prepared by use of the preparation method, a majority of process steps can be finished on a routine crystalline silicon battery production line, the power-mass ratio is high, the battery is suitable for a low-altitude aircraft, the preparation cost is quite low, and the application prospect is wide.

Description

technical field [0001] The invention belongs to the field of preparation of crystalline silicon batteries, and in particular relates to a preparation method of ultra-thin and efficient flexible crystalline silicon batteries. Background technique [0002] Improving the application range and depth of solar cells has always been the unremitting pursuit of people. At present, crystalline silicon solar cells have been widely used in ground space and have been recognized by people. High specific flexible solar cells have always been the most basic requirement for the normal operation of high-altitude aircraft. [0003] The aerospace field needs flexible solar cell modules with strong stability, high resistance to radiation attenuation, power-to-mass ratio, and high cost performance. The earliest solar cell used in the international aerospace field was N-type crystalline silicon cells, but after high-energy radiation in space, the efficiency attenuated and the stability was lower ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/022425H01L31/022433H01L31/022441H01L31/1804Y02P70/50
Inventor 姬常晓刘文峰杨晓生成文陆运章
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products