A preparation method of ultra-thin flexible crystalline silicon battery
A crystalline silicon battery, flexible technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large efficiency attenuation, few R & D units, low attenuation resistance, etc. The effect of preparation cost
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[0036] According to the preparation method of ultra-thin flexible high-efficiency crystalline silicon battery, the present invention uses P-type CFZ single crystal silicon as the substrate, and the specific process flow is as follows:
[0037] The preparation method of the ultra-thin flexible high-efficiency crystalline silicon battery comprises the following steps:
[0038] (1) Make the resistivity 3~5Ω﹒ cm P-type CFZ single crystal silicon wafer cut into 125×125mm with a thickness of 90-120μm 2 or 156×156mm 2 Silicon wafer;
[0039] (2) Clean and texture the cut silicon wafer, and prepare a PN junction with a square resistance of 65-80 Ω / □ on the silicon wafer through a two-step high-temperature diffusion method; the parameters of the two-step high-temperature diffusion method are: The diffusion temperature of the first step is 770-800°C, the diffusion time is 10-20min, the second-step diffusion temperature is 800-850°C, the diffusion time is 15-25min, and the annealing tim...
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