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A preparation method of ultra-thin flexible crystalline silicon battery

A crystalline silicon battery, flexible technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large efficiency attenuation, few R & D units, low attenuation resistance, etc. The effect of preparation cost

Active Publication Date: 2016-05-18
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The earliest solar cell used in the international aerospace field was N-type crystalline silicon cells, but after high-energy radiation in space, the efficiency attenuated and the stability was lower than that of P-type crystalline silicon cells. P-type crystalline silicon cells became the first choice for space applications. Later, arsenic A breakthrough in the preparation of gallium chloride, and replaced the P-type battery
Thin-film solar cell components such as amorphous silicon and copper indium gallium selenide have low attenuation resistance, and the efficiency attenuation is relatively large after space irradiation tests; the preparation process of gallium arsenide is extremely difficult, the price of cell components is too high, and there are few international research and development units

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  • A preparation method of ultra-thin flexible crystalline silicon battery
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  • A preparation method of ultra-thin flexible crystalline silicon battery

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Embodiment 1

[0036] According to the preparation method of ultra-thin flexible high-efficiency crystalline silicon battery, the present invention uses P-type CFZ single crystal silicon as the substrate, and the specific process flow is as follows:

[0037] The preparation method of the ultra-thin flexible high-efficiency crystalline silicon battery comprises the following steps:

[0038] (1) Make the resistivity 3~5Ω﹒ cm P-type CFZ single crystal silicon wafer cut into 125×125mm with a thickness of 90-120μm 2 or 156×156mm 2 Silicon wafer;

[0039] (2) Clean and texture the cut silicon wafer, and prepare a PN junction with a square resistance of 65-80 Ω / □ on the silicon wafer through a two-step high-temperature diffusion method; the parameters of the two-step high-temperature diffusion method are: The diffusion temperature of the first step is 770-800°C, the diffusion time is 10-20min, the second-step diffusion temperature is 800-850°C, the diffusion time is 15-25min, and the annealing tim...

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Abstract

The invention discloses a method for preparing an ultra-thin flexible crystalline silicon battery. The method introduces a CFZ, MCZ, or FZ silicon wafer as a substrate, and prepares a textured sheet with a thickness of less than 100 μm through texturing and thinning, and adopts a conventional high-temperature diffusion method. Prepare the PN junction, after cleaning, plate Al2O3 as the back passivation film by microwave flat plate PECVD, and coat the front and rear surfaces of the silicon wafer with SiNx anti-reflection film and protective film. Improve the preparation of aluminum back conductive layer and front and rear electrodes with extremely small thickness of aluminum paste by screen printing method, and form ultra-thin and high-efficiency crystalline silicon cells with excellent electrical properties after sintering, and use laser cutting to form small-sized components that are easy to package and have high reliability Battery. The ultra-thin flexible new high-efficiency crystalline silicon battery prepared by the invention can be completed in most of the process flow on the conventional crystalline silicon battery production line, has a high power-to-mass ratio, is suitable for low-altitude aircraft, has low preparation cost, and has broad application prospects.

Description

technical field [0001] The invention belongs to the field of preparation of crystalline silicon batteries, and in particular relates to a preparation method of ultra-thin and efficient flexible crystalline silicon batteries. Background technique [0002] Improving the application range and depth of solar cells has always been the unremitting pursuit of people. At present, crystalline silicon solar cells have been widely used in ground space and have been recognized by people. High specific flexible solar cells have always been the most basic requirement for the normal operation of high-altitude aircraft. [0003] The aerospace field needs flexible solar cell modules with strong stability, high resistance to radiation attenuation, power-to-mass ratio, and high cost performance. The earliest solar cell used in the international aerospace field was N-type crystalline silicon cells, but after high-energy radiation in space, the efficiency attenuated and the stability was lower ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/022425H01L31/022433H01L31/022441H01L31/1804Y02P70/50
Inventor 姬常晓刘文峰杨晓生成文陆运章
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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