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Method for manufacturing nano silver wire

A technology of nano-silver wire and silver nitrate, which is applied in the direction of nanotechnology, can solve the problems of high synthesis cost, environmental pollution, harsh reaction conditions, etc., achieve good application and industrialization prospects, simple and easy-to-control preparation conditions, and low cost of process conditions low effect

Inactive Publication Date: 2014-07-02
SHANGHAI FUXIN NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, high-temperature chemical vapor deposition is to mix silver and metal catalysts by air blowing at a high temperature above 1000°C. The metal catalysts are iron, cobalt, gold, nickel, gallium, etc. grow nano-silver wires; this method can easily obtain nano-silver wires, but the required reaction conditions are very harsh, and this method cannot meet the requirements of large-scale production of nano-silver wires
The hard template method is to deposit silver particles in its pores with the help of an alumina template to obtain one-dimensional silver nanowires; the quality of silver nanowires produced by this method is often not high, and the one-dimensional structure is easy to collapse
The sol-gel method is to grow nano-silver wires through the action of silver and template agent, and then remove the template agent by roasting or chemical corrosion, and finally obtain nano-silver wires; Nanowires can be grown under the environment, but templates need to be consumed, the synthesis cost is high, and the roasting of templates will also pollute the environment, and it is also not suitable for large-scale production.

Method used

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  • Method for manufacturing nano silver wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1) The monocrystalline silicon used in this embodiment is a 1cm×1cm monocrystalline silicon wafer; the single crystal silicon wafer has a P-type 100 crystal surface, a resistivity of 3-8 ohms / cm, a thickness of 350nm, and single-sided polishing . Soak monocrystalline silicon in acetone for 5 minutes and wash with water;

[0029] 2) Place the monocrystalline silicon processed in step 1) into a 100mL centrifuge tube containing 40ml of silver nitrate aqueous solution with a concentration of 4g / L; the solid-to-liquid ratio of the monocrystalline silicon to the silver nitrate aqueous solution is 0.1 g / mL;

[0030] 3) adding hydrofluoric acid, capping and sealing the centrifuge tube, and sealing and reacting for 1 hour at an oil bath temperature of 50° C., wherein the volume ratio of the hydrofluoric acid to the silver nitrate aqueous solution in step 2) is 0.25;

[0031] 4) The reaction product in step 3) was taken out, washed with water and ultrasonically separated from t...

Embodiment 2

[0035] The single crystal silicon used in this embodiment is 40 mesh silicon powder.

[0036] 1) Soak 2g of silica fume in acetone for 5 minutes and wash with water;

[0037] 2) the silicon powder processed in step 1) is placed in the 100mL centrifuge tube that fills 40ml concentration and is the silver nitrate aqueous solution of 5g / L; The solid-liquid ratio of described monocrystalline silicon and described silver nitrate aqueous solution is 0.05g / mL;

[0038] 3) adding hydrofluoric acid, capping and sealing the centrifuge tube, and sealing and reacting for 2 hours at an oil bath temperature of 60° C., wherein the volume ratio of the hydrofluoric acid to the silver nitrate aqueous solution in step 2) is 0.2;

[0039] 4) The reaction product in step 3) was taken out, washed with water and ultrasonically separated from the silicon chip, and soaked in 6 wt% nitric acid aqueous solution for 2 minutes, then centrifuged to separate the solid and washed with water to obtain the p...

Embodiment 3

[0043] Experiment with the same method as Example 2, but change the silicon powder into 80 mesh.

[0044] The SEM picture of the silver nano wire obtained in the present embodiment is as image 3 shown.

[0045] The length of the nano-silver wire prepared in this example is: 5-50 μm, the diameter is 40-200 nm, and the product purity is more than 95%.

[0046] superior.

[0047] Using the silver nanowires prepared in Example 3 of the present invention, the conductive silver glue was prepared according to the preparation method of silver nanowire doped conductive silver glue disclosed in the domestic application number 2011100631768. The effect of the obtained conductive silver paste is shown in Table 1 and Table 2 below:

[0048] Among them, Table 1 is a comparison of the resistivity values ​​of the conductive silver glue obtained after adding silver powder particles and adding the silver nanowires in Example 3 of the present invention. Table 2 is a comparison of the perfor...

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Abstract

The invention provides a method for manufacturing a nano silver wire. According to the method, a silver nitrate aqueous solution serves as a raw material, and the nano silver wire of one-dimensional growth is obtained by etching the silicon surface through hydrofluoric acid and restoring silver ions. The method is simple in preparation condition, low in process condition and cost, high in preparation efficiency, high in product quality and high in the yield, the purity of products is larger than 95 percent, and the method has good application and industrial prospects.

Description

technical field [0001] The invention relates to the field of one-dimensional nanomaterials, in particular to a method for preparing nano silver wires. Background technique [0002] One-dimensional nanomaterials include nanowires, nanotubes, nanorods, etc. Due to their microscopic one-dimensional structure and large specific surface area, one-dimensional nanomaterials are widely used in the fields of catalysis, environmental protection and other functional material assembly. prospect. Silver material itself has very good conductivity, and has a wide range of applications in the fields of optics, electrochemistry, catalysis, adsorption and separation, and the synthesis of silver nanowires has become a research hotspot in the field of materials in recent years. [0003] At present, the synthesis of silver nanowires mainly relies on high-temperature chemical vapor deposition; hard template method and sol-gel. Among them, high-temperature chemical vapor deposition is to mix sil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B82Y40/00
Inventor 陈平程晓丹陈明富
Owner SHANGHAI FUXIN NEW ENERGY TECH
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