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Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof

A ferroelectric thin film, polarization technology, applied in chemical instruments and methods, inorganic chemistry, iron compounds, etc., can solve the practical application obstacles of BiFeO3 materials, it is difficult to obtain a saturated hysteresis loop, and it is difficult to prepare pure equal problem, to achieve the effect of improving multiferroic properties, enhancing insulation and improving electrical properties

Active Publication Date: 2014-04-09
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, BiFeO 3 Practical applications of the material have been severely hampered
The main reasons are: BiFeO 3 Has relatively high leakage current; BiFeO 3 Its nature determines that it is difficult to prepare a pure phase; BiFeO 3 Oxygen vacancies, Fe 3+ Ion price change and other issues
So it is difficult to obtain a saturated hysteresis loop at room temperature

Method used

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  • Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof
  • Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof
  • Bi0.90Ho0.10Fe1-XMnXO3 ferroelectric film with high remanent polarization and preparation method thereof

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Effect test

Embodiment 1

[0038] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, then take it out and let it stand at room temperature. Finally, place the FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0039] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Ho (NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution ...

Embodiment 2

[0044] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, then take it out and let it stand at room temperature. Finally, place the FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0045] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Ho (NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution ...

Embodiment 3

[0050] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning, rinse the substrate with a large amount of distilled water after each ultrasonic cleaning for 10 minutes, and finally use nitrogen blow dry. Then put the FTO / glass substrate into a 70°C oven and bake for 5 minutes, then take it out and let it stand at room temperature. Finally, place the FTO / glass substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness".

[0051] Step 2: Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, Ho (NO 3 ) 3 ·6H 2 O and C 4 h 6 MnO 4 4H 2 O is dissolved in the mixed solution, and a uniform and stable precursor solution is obtained after magnetic stirring for 2.5 hours, wherein the mixed solution is formed by mixing ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1, and the total in the precursor solution ...

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Abstract

The invention relates to a Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and a preparation method thereof, wherein x is equal to 0.01-0.05, and the film is of a distorted perovskite structure, has a diamond crystal system and has good uniformity, remanent polarization of 78-108 muC / cm<2>, and a dielectric constant of 196.2-271.8. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate, holmium nitrate and manganese acetate in a mixture prepared by mixing ethylene glycol monomethyl ether and acetic anhydride to obtain a precursor solution; spin-coating the precursor solution on a substrate, coating glue evenly, then baking to obtain a dry film, then annealing to obtain a Bi0.90Ho0.10Fe1-xMnXO3 film, and repeatedly spin-coating the precursor solution, baking and annealing to achieve the required film thickness to obtain the film. According to the Bi0.90Ho0.10Fe1-xMnXO3 ferroelectric film with high remanent polarization and the preparation method thereof, the requirements for equipment are simple, the doping amount is easy to control, and the ferroelectric properties of the BiFeO3 film can be greatly improved.

Description

technical field [0001] The invention belongs to the field of functional materials, in particular to a Bi with high remanent polarization 0.90 Ho 0.10 Fe 1-x mn x o 3 Ferroelectric thin film and its preparation method. Background technique [0002] Due to BiFeO 3 It is one of the few materials that exhibit both ferroelectricity and ferromagnetism at room temperature (Tc=1103K, T N =640K). Therefore, it has broad application prospects in magnetic storage, and it is expected to develop new materials with high reading speed of ferroelectric materials and high writing speed of ferromagnetic materials on this basis. Therefore, in recent years, a large number of teams have worked on BiFeO 3 Materials research. [0003] Currently used to prepare BiFeO 3 There are many methods of thin film, chemical vapor deposition (CVD), magnetron sputtering (rf magnetron sputtering), metal organic deposition (MOD), metal organic chemical vapor deposition (MOCVD), liquid phase deposition ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G49/00
Inventor 谈国强耶维
Owner SHAANXI UNIV OF SCI & TECH
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