Magnetic tunnel junction

A technology of magnetic tunnel junction and magnetic layer, applied in the field of magnetic tunnel junction, can solve the problems of large lattice mismatch, reduced breakdown voltage, interfacial dislocation and potential barrier defects, etc., and achieves a high tunneling magnetoresistance ratio. Effect

Inactive Publication Date: 2014-01-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the lattice mismatch between single crystal MgO(001) barrier and commonly used ferromagnetic metals such as Fe and CoFe is relatively large, resulting in interfacial dislocations and barrier defects, which limit the further improvement of the magnetoresistance ratio and lea

Method used

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Examples

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example 1

[0079] Magnetic tunnel junction based on spinel oxide single barrier prepared by magnetron sputtering, the structure is Si-SiO 2 / Ta(5nm) / Ru(20nm) / Ta(5nm) / IrMn(15nm) / CoFeB(3nm) / ZnAl 2 o 4 (2nm) / CoFeB(4nm) / Ta(5nm) / Ru(5nm). During deposition, a plane-induced magnetic field of 1000Oe is added, so the magnetization direction of the first magnetic layer is fixed by the antiferromagnetic pinning layer, and the magnetization direction of the second magnetic layer is free.

[0080] (1) Choose a Si-SiO with a thickness of 1mm 2 The substrate is used as the substrate SUB, and the vacuum on the magnetron sputtering equipment is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, and the argon pressure during deposition is the condition of 0.07Pa, the seed layer SL of Ta(5nm) / Ru(20nm) / Ta(5nm) is deposited on the substrate;

[0081] (2) On the magnetron sputtering equipment, the vacuum is better than 2×10 -6 Pa, the deposition rate is 0.1nm / s, the condition of argon pressure is 0....

example 2

[0092] The structure of the magnetic tunnel junction based on spinel oxide double barrier prepared by magnetron sputtering is:

[0093] Si-SiO 2 / Ta(5nm) / Ru(20nm) / Ta(5nm) / IrMn(15nm) / CoFeB(3nm) / SiZn 2 o 4 (2nm) / CoFeB(4nm) / SiZn 2 o 4 (2nm) / CoFeB(4nm) / IrMn(15nm) / Ta(5nm) / Ru(5nm).

[0094]During deposition, a plane-induced magnetic field of 1000Oe is added, so the magnetization directions of the first magnetic layer and the third magnetic layer are fixed in the same direction by the antiferromagnetic pinning layer, and the magnetization direction of the second magnetic layer is free. The specific preparation method is similar to Example 1.

[0095] Example 3~8:

[0096] The composition and thickness of each layer of the multilayer film of the single-barrier magnetic tunnel junction prepared according to the method of Example 1 are shown in Table 1. Among them, the barrier layer can use spinel oxide barrier, preferably MgAl 2 o 4 , ZnAl 2 o 4 , SiMg 2 o 4 、SiZn 2 o 4 ...

Embodiment 15~19

[0106] For the magnetic tunnel junction prepared according to the method of Example 1, the composition and thickness of each layer of the multilayer film are shown in Table 3. Wherein the first and second magnetic layers both adopt antiferromagnetic pinning structure. The structure of the magnetic tunnel junction is SUB / SL / AFM1 / NM1 / FM1 / Space / FM2(1) / NM2 / FM2(2) / AFM2 / CAP, and the composition and thickness of each layer of the multilayer film are shown in Table 3. Among them, the barrier layer can use spinel oxide barrier, preferably MgAl 2 o 4 , ZnAl 2 o 4 , SiMg 2 o 4 、SiZn 2 o 4 , including MgGa 2 o 4 、MgIn 2 o 4 , ZnGa 2 o 4 、ZnIn 2 o 4 、CdAl 2 o 4 , CdGa 2 o 4 、CdIn 2 o 4 、SiCd 2 o 4 , GeMg 2 o 4 、GeZn 2 o 4 、GeCd 2 o 4 , SnMg 2 o 4 , SnZn 2 o 4 , SnCd 2 o 4 etc., the thickness is 0.5~5.0nm; the material and thickness of the two barrier layers can be the same or different; the substrate can be Si substrate, SiC, MgO, GaAs, glass substrate or...

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Abstract

The invention relates to a magnetic tunnel junction of a spinel oxide potential barrier, and the application in device thereof. The potential barrier of the magnetic tunnel junction is made of spinel oxides. The tunnel junction may be of a single potential barrier structure or of a double potential barrier structure. The novel single potential barrier magnetic tunnel junction provided by the invention can be applied to a spintronic device and comprises a magneto-dependent sensor, a magnetic random access memory unit, a magnetic logic device unit, a spin transistor and a spin field effect transistor. According to the magnetic tunnel junction based on novel potential barriers, the mismatch degree between a potential barrier layer and a magnetic crystal lattice is quite small, while a high room temperature tunneling magneto-resistor ratio is maintained, the bias dependence feature is quite weak, and the breakdown voltage is improved.

Description

technical field [0001] The invention relates to a magnetic tunnel junction based on a spinel oxide barrier and its application in spintronic devices. Background technique [0002] In 1988, a research team led by French physicist Fert discovered a giant magnetoresistance effect (GMR) of up to 50% in Fe / Ge multilayer films. Due to the huge potential application value of this effect in the information field, once it came out, it caused a research boom of the magnetoresistance effect. In 1994, IBM developed a read head using the giant magnetoresistance effect, which increased the storage density of hard disks by 17 times to 3Gbits / in 2 . In 1995, Japanese T. Miyazaki et al. and American J.S. Moderola et al. discovered high room-temperature tunneling magnetoresistance (TMR) in ferromagnetic metals / Al-O insulating barriers / ferromagnetic metals, which set off magnetoresistance once again. effect research wave. At present, TMR values ​​exceeding 600% at room temperature have bee...

Claims

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Application Information

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IPC IPC(8): H01L43/08
Inventor 吴昊张佳余天张晓光韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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