Processing method of processing device for enhancing sapphire laser backward wet etching rate

Abstract

The invention relates to a machining device and a machining method for enhancing a sapphire laser back wet etching rate. The machining device comprises a protection device, a laser beam, a lens assembly, a container and a limit layer, operating fluid is filled in a hollow cavity formed in the container, a workpiece is placed on the surface of the operating fluid and contacts with the operating fluid, the protection device is mounted at the top of the workpiece, the limit layer is mounted below the workpiece, and the laser beam irradiates the back of the workpiece through the lens assembly. The machining device has a high material removing rate under the condition of ensuring fine surface machining quality of sapphires. According to the machining method, chippings are easily taken away by the fluid, the heat effect of laser ablation is small, a regelation layer in a machining area is omitted, machining quality is fine, a laser-induced cavitation effect leads to a micro-jet enhancement effect, the laser etching rate of transparent materials such as the sapphires is enhanced, and micro-structures and shape cutting of material surfaces can be realized. The machining method is simple to operate, convenient, practical and high in machining speed.

Description

technical field [0001] The invention relates to a processing method of a processing device for cutting, drilling and manufacturing surface microstructures of sapphire, which enhances the sapphire laser back-to-wet etching rate, and belongs to the processing method of a sapphire laser back-to-wet etching processing device innovative technology. Background technique [0002] Sapphire single crystal has high hardness (Mohs hardness is 9), high melting point (2030 o C), good wear resistance, high temperature (1000 o C) It can still maintain good comprehensive properties such as chemical stability and high transmittance. It is known as the basic material of the "new light source revolution" and is the most important industrialized substrate for the third-generation semiconductor material GaN. The market demand is increasing by 40% per year. speed increased rapidly. Sapphire has been widely used in many fields such as electronic information, national defense and medical treatme...

AI Technical Summary

Problems solved by technology

However, when cutting thicker sapphire, as the cutting depth increases, the liquid cannot overflow to the already formed kerf in time and continue to deposit, resulting in reduced processing efficiency and even difficulty in processing

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