Power strangulation electrostatic discharge protection circuit

Abstract

A power strangulation electrostatic discharge protection circuit comprises a silicon control rectifier and a control module, wherein the silicon control rectifier is electrically connected between a high voltage level and a low voltage level to carry a current path. The control module is parallel to the silicon control rectifier, and includes a P-type metal oxide semiconductor field effect transistor, an N-type metal oxide semiconductor field effect transistor, at least one output diode, a resistor, and a breakover serial. The silicon control rectifier can be a P-type or N-type substrate-triggered silicon control rectifier. By using such novel power strangulation electrostatic discharge protection circuit, the leakage current of the circuit can be significantly reduced, and processing area of elements can be eliminated.

Description

technical field [0001] The invention relates to an electrostatic discharge (Electro-Static Discharge, ESD) protection circuit, in particular to a power supply clamp type electrostatic discharge protection circuit (Power-rail ESD Clamp Circuit). Background technique [0002] With the growing prosperity of the IC industry, CMOS processing technology has been gradually miniaturized to the nanometer level, and the gate oxide of the transistor has been gradually miniaturized and thinned to a few nanometers. . As the thickness of the gate oxide layer becomes thinner, a larger gate leakage current will be induced at the same time, which seems to be the most common challenge encountered in modern CMOS processing technology. figure 1 It is the data graph of the gate leakage current simulation results of the N-type MOSFET and the P-type MOSFET with a size of 1 μm / 1 μm at a bias voltage of 1 volt and an ambient temperature of T=25°C. . Depend on figure 1 The results shown can show ...

AI Technical Summary

Problems solved by technology

[0009] In order to solve the problems existing in the prior art, the main purpose of the present invention is to provide a novel power supply clamp electrostatic discharge protection circuit, which can not only achieve the purpose of reducing the processing area of ​​components, but also solve the problem of excessive leakage current of common ESD circuits. question

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