Selective iron etching solution and etching method
An etching solution and selective technology, which is applied in the field of selective iron etching solution and etching, can solve the problems of unsatisfactory clean environment of IC substrate and release of irritating gas, etc., and achieve stable etching rate, small side etching, and copper etching The effect of small speed
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Embodiment 1
[0025] Dilute 136ml of concentrated sulfuric acid (98%) to 800ml with deionized water, add 90g of sodium m-nitrobenzenesulfonate to fully dissolve it, then add 0.5g of triethanolamine and 1g of n-octanol, and finally dilute to 1L with deionized water , that is, the selective iron etching solution with an acid content of 5 mol / L is obtained.
Embodiment 2
[0027] According to the same preparation method as in Example 1, the difference is that the concentrated sulfuric acid (98%) used in the etching solution is 55ml, sodium m-nitrobenzenesulfonate is 220g, triethanolamine is 0.5g, n-octanol is 1.5 g, finally diluted to 1L with deionized water to obtain a selective iron etching solution with an acid content of 2mol / L.
Embodiment 3
[0029] According to the same preparation method as in Example 1, the difference is that the concentrated sulfuric acid (98%) used in the etching solution is 272ml, sodium m-nitrobenzenesulfonate is 4g, and hexamethylenetetramine is 0.5g and 2g n-octanol, and finally diluted to 1L with deionized water to obtain a selective iron etching solution with an acid content of 10mol / L.
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