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Selective iron etching solution and etching method

An etching solution and selective technology, which is applied in the field of selective iron etching solution and etching, can solve the problems of unsatisfactory clean environment of IC substrate and release of irritating gas, etc., and achieve stable etching rate, small side etching, and copper etching The effect of small speed

Active Publication Date: 2013-07-10
KUNSHAN CITY BANMING ELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this etching solution has the advantages of strong etching ability, high etching rate, and good uniformity in a large area, and the corrosion rate of this type of etching solution on copper is low, irritating gas is released during use. Unable to meet the clean environment required for IC substrate production

Method used

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  • Selective iron etching solution and etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Dilute 136ml of concentrated sulfuric acid (98%) to 800ml with deionized water, add 90g of sodium m-nitrobenzenesulfonate to fully dissolve it, then add 0.5g of triethanolamine and 1g of n-octanol, and finally dilute to 1L with deionized water , that is, the selective iron etching solution with an acid content of 5 mol / L is obtained.

Embodiment 2

[0027] According to the same preparation method as in Example 1, the difference is that the concentrated sulfuric acid (98%) used in the etching solution is 55ml, sodium m-nitrobenzenesulfonate is 220g, triethanolamine is 0.5g, n-octanol is 1.5 g, finally diluted to 1L with deionized water to obtain a selective iron etching solution with an acid content of 2mol / L.

Embodiment 3

[0029] According to the same preparation method as in Example 1, the difference is that the concentrated sulfuric acid (98%) used in the etching solution is 272ml, sodium m-nitrobenzenesulfonate is 4g, and hexamethylenetetramine is 0.5g and 2g n-octanol, and finally diluted to 1L with deionized water to obtain a selective iron etching solution with an acid content of 10mol / L.

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PUM

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Abstract

The invention discloses selective iron etching solution, comprising 4-250g / L of a water-soluble aromatic nitro-compound, 2-10mol / L of inorganic acid, 0.1-2g / L of a corrosion inhibitor and the balance of deionized water. A novel selective etching system is adopted; the etching method is fast in iron etching speed, stable in etching speed, even in etched surface, small in side corrosion, regular in side boundary and small in copper etching speed; the iron etching speed and the copper etching speed are greater than or equal to 200; the etching solution does not contain the materials with large volatility, such as hydracids or nitric acid; the etching solution is greener and more environment-friendly; and the etching solution is suitable for selective etching of the surface of a copper base material, and is also suitable for refined processing of carbon steel or low-alloy steel and members thereof.

Description

technical field [0001] The invention relates to the technical field of metal surface etching processing, in particular to a selective iron etching solution and an etching method. Background technique [0002] With the rapid development of the electronics industry, IC substrates have become an important electronic product. There are various manufacturing processes for carrier boards. Copper plating on iron substrates is an important process for making substrates. The process principle is as follows: first, one side of the cold-rolled carbon steel sheet, that is, the iron substrate, is plated with copper to form a contour pattern, and then the iron substrate is removed by chemical etching to retain the pure copper contour pattern, and further processed to form a carrier. [0003] There have been many reports on iron chemical etching solutions: the patent publication No. CN101173360A discloses a stainless steel etching solution, the main components of which include ferric chl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/28C23F1/02
Inventor 陈修宁李建王扩军黄志齐黄京华王淑萍
Owner KUNSHAN CITY BANMING ELECTRONICS SCI & TECH
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