Etchant of molybdenum and/ or aluminum containing metal film for OLED (Organic Light Emitting Diode) and preparation method thereof
An etching solution, aluminum metal technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of difficulty in controlling the taper angle of molybdenum metal film at 20°-70°, easy to generate residues, affecting etching accuracy, etc. problems, to achieve the effect of improving the solid-liquid interfacial tension, improving the etching accuracy and stabilizing the etching speed
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Embodiment 1-11
[0030] 50 parts by weight of phosphoric acid aqueous solution with a mass percent concentration of 52%, 1 part by weight of an aqueous solution of nitric acid with a mass percent concentration of 65%, 1 part by weight of betaine amphoteric surfactant lauramide propyl hydroxysultaine and deionized After mixing 48 parts by weight of water, the etching solution provided by the present invention was obtained.
[0031] Following exactly the same steps as above, only the above raw materials were replaced as shown in Table 1 to obtain the etching solutions provided in Examples 2-11 and Comparative Examples 1-7.
[0032] Table 1. Etching solution composition and etching effect list
[0033]
[0034] Surfactant A - lauryl amidopropyl hydroxysultaine
[0035] Surfactant B - lauryl amidopropyl betaine
[0036] Surfactant C - Cocamidopropyl Hydroxysultaine
[0037] Etching angle ○——cone angle is 20°-70°
[0038] Etching angle ×—cone angle is less than 20° or greater than 70°
[00...
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