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Etching solution for performing wet etching on lanthanum nickelate film and ferroelectric film/lanthanum nickelate composite film and preparation method thereof

A ferroelectric thin film and wet etching technology, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problem of small side etching ratio, etc., and achieve the effect of clear edge, wide application, and steep interface

Inactive Publication Date: 2013-05-08
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a kind of etch solution and preparation method thereof of wet etching lanthanum nickelate thin film and ferroelectric thin film / lanthanum nickelate composite thin film, to solve wet etching deposition on SiO 2 And / or the difficulty of lanthanum nickelate film or ferroelectric film / lanthanum nickelate composite film on the surface of Pt, to obtain etched patterns with clear edges and small side etching ratio

Method used

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  • Etching solution for performing wet etching on lanthanum nickelate film and ferroelectric film/lanthanum nickelate composite film and preparation method thereof
  • Etching solution for performing wet etching on lanthanum nickelate film and ferroelectric film/lanthanum nickelate composite film and preparation method thereof
  • Etching solution for performing wet etching on lanthanum nickelate film and ferroelectric film/lanthanum nickelate composite film and preparation method thereof

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Experimental program
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Embodiment 1

[0027] The corrosion solution described in this embodiment is used for LNO / SiO 2 The LNO film in the Si substrate is etched, and the LNO film in the substrate has good crystallization and a thickness of 600nm.

[0028] (1) Preparation of corrosion solution

[0029] Using hydrogen peroxide, nitric acid, hydrofluoric acid and deionized water as raw materials, the volume ratio of deionized water, hydrogen peroxide, nitric acid and hydrofluoric acid is: deionized water: hydrogen peroxide: nitric acid: hydrofluoric acid = 1: 2.5: 0.5: 0.12 , at normal temperature (22°C) and normal pressure, mix the deionized water and hydrogen peroxide measured according to the above volume ratio evenly, then add the measured nitric acid and mix well, then add the measured hydrofluoric acid and mix well, That is, a corrosive solution is formed.

[0030] (2) Etching of LNO film

[0031] Apply photoresist (negative, L-300) on LNO / SiO by spin coating 2 / Si substrate, through pre-baking (95°C, 5 mi...

Embodiment 2

[0034] The corrosion solution described in this embodiment is used for BST / LNO / SiO 2 The BST / LNO composite film on the Si substrate is etched, and the BST / LNO composite film in the substrate is well crystallized, wherein BST (barium strontium titanate Ba 1-x Sr x TiO 3 Abbreviation) layer thickness is 800nm, LNO layer thickness is 250nm.

[0035] (1) Preparation of corrosion solution

[0036] Using hydrogen peroxide, nitric acid, hydrofluoric acid and distilled water as raw materials, the volume ratio of distilled water, hydrogen peroxide, nitric acid and hydrofluoric acid is: distilled water: hydrogen peroxide: nitric acid: hydrofluoric acid = 1:2:0.5:0.1, at room temperature (18°C ), under normal pressure, mix the deionized water and hydrogen peroxide measured according to the above volume ratio evenly, then add the measured nitric acid and mix evenly, and then add the measured hydrofluoric acid and mix evenly to form a corrosion solution.

[0037] (2) Etching of BST / LNO...

Embodiment 3

[0041] The etching solution described in this embodiment is used for LNO / Pt / Ti / SiO 2 The LNO film in the Si substrate is etched, and the LNO film in the substrate has good crystallization and a thickness of 400nm.

[0042] (1) Preparation of corrosion solution

[0043] Using hydrogen peroxide, nitric acid, hydrofluoric acid and deionized water as raw materials, the volume ratio of deionized water, hydrogen peroxide, nitric acid and hydrofluoric acid is: deionized water: hydrogen peroxide: nitric acid: hydrofluoric acid = 1: 2.5: 1: 0.06 , at normal temperature (26°C) and normal pressure, mix the deionized water and hydrogen peroxide measured according to the above volume ratio evenly, then add the measured nitric acid and mix well, then add the measured hydrofluoric acid and mix well, That is, a corrosive solution is formed.

[0044] (2) Etching of LNO film

[0045] Apply photoresist (negative, L-300) on LNO / Pt / Ti / SiO by spin coating 2 / Si substrate, through pre-baking (95...

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Abstract

The invention discloses an etching solution for performing wet etching on a lanthanum nickelate film and a ferroelectric film / lanthanum nickelate composite film. The etching solution is prepared from hydrogen peroxide, nitric acid, hydrofluoric acid and purified water, wherein a volume ratio of the purified water to hydrogen peroxide to nitric acid to hydrofluoric acid is 1:2-3:0.5-1.0:0.06-0.12. The method for preparing the etching solution comprises the following steps of: uniformly mixing metered purified water and hydrogen peroxide under normal temperature and normal pressure according to the formula, adding metered nitric acid, uniformly mixing, continuously adding metered hydrofluoric acid and uniformly mixing. According to the etching solution, the LNO film or LNO composite film on the surface of SiO2 and / or Pt can be cleanly and completely removed at a time, and an etching picture which is clear in edge and low in lateral erosion ratio is obtained.

Description

technical field [0001] The invention relates to the field of wet etching corrosion solution, in particular to an etching solution for wet etching lanthanum nickelate film and ferroelectric film / lanthanum nickelate composite film and a preparation method thereof Background technique [0002] The integration of ferroelectric thin films and semiconductor materials has opened up an effective way for the design and fabrication of a new generation of electronic devices with the characteristics of miniaturization, low power consumption, and multi-functional integration. The electrical properties of ferroelectric thin films are affected by many factors, such as the chemical composition, crystallinity, microstructure and crystallographic orientation of the thin films, among which the electrode material is the key factor affecting the performance of ferroelectric thin film devices. Currently, Pt / Ti metal thin films are widely used as electrode materials for ferroelectric thin film dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08
Inventor 余萍陈潇洋樊明雷朱建国张小山
Owner SICHUAN UNIV
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