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Preparation method for front-surface electrode of solar cell

A technology of solar cells and front electrodes, applied in the field of solar cells, can solve the problems of lead pollution, poor conduction effect of the front electrodes of solar cells, and large power consumption, so as to improve the conductivity, benefit the protection of the environment, and save electric energy Effect

Inactive Publication Date: 2012-11-28
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a method for preparing a front electrode of a solar cell to solve the problems in the prior art that the front electrode of a solar cell has poor conduction effect, consumes a lot of electric energy, and uses lead to pollute the environment

Method used

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preparation example Construction

[0018] In a typical embodiment of the present invention, the preparation method of the front electrode of the solar cell includes texturing, diffusion, etching, deposition of silicon nitride film, printing of silver paste and sintering steps, wherein silicon nitride is deposited on the silicon wafer After removing the silicon nitride film on the position of the pre-formed front gate line, it further includes the step of removing the silicon nitride film. Since the silicon nitride film on the pre-formed front gate line is removed, the silver paste can be directly deposited on the pre-formed front gate line when printing silver paste, forming a good ohmic contact with the silicon wafer substrate, effectively reducing the contact resistance. With this process, the silver paste does not need to be mixed with lead-containing boric acid glass powder to etch and penetrate the silicon nitride film during sintering, which increases the silver content in the silver paste, thereby improv...

Embodiment 1

[0026] The silicon wafer cut according to the size specifications is made into a standard silicon wafer substrate through texturing, diffusion and etching; the silicon nitride film is deposited on the silicon wafer substrate by PECVD (plasma enhanced chemical vapor deposition); the German Merck The BES series chemical paste produced by the company is printed on the silicon nitride film by screen printing at room temperature. Carry out for 10 seconds to obtain the corrosion pattern corresponding to the position of the front grid line; select the silver paste containing 80wt% metallic silver particles and 20wt% phenolic resin, and use the same pattern as the previous step. Screen mask, by screen printing Print silver paste on the position of the front grid line in the same way; sinter at 400°C to make the front electrode.

Embodiment 2

[0028] The silicon wafer cut according to the size specifications is made into a standard silicon wafer substrate through texturing, diffusion and etching; the silicon nitride film is deposited on the silicon wafer substrate by PECVD (plasma enhanced chemical vapor deposition); the German Merck The BES series chemical paste produced by the company is printed on the silicon nitride film by screen printing at room temperature. Carry out for 10 seconds to obtain the corrosion pattern corresponding to the position of the front grid line; select the silver paste containing 90wt% metallic silver particles and 10wt% epoxy resin, and use the same pattern as the previous step. The printing method prints silver paste on the position of the grid line on the front side; sintering at 700°C to make the front electrode.

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Abstract

The invention provides a preparation method for the front-surface electrode of a solar cell. The preparation method comprises the following steps of: texturizing, diffusing, etching, depositing a silicon nitride film, printing a silver paste, and sintering, and further comprising a step of removing the silicon nitride film at the position of a preformed front-surface gate line after depositing the silicon nitride film on a silicon slice. In the preparation method provided by the invention, because the silicon nitride film at the position of the preformed front-surface gate line is removed before printing the silver paste, lead-containing borate glass powder has no need to be doped in the silver paste to corrode the silicon nitride film, and a high-temperature sintering process has no need to be adopted in the subsequent steps. Because the glass powder is not contained in the silver paste, the content of silver in the silver paste can be increased, and then the conducting performance of the silver paste can be improved; simultaneously, lead is not contained in the silver paste, so that environmental friendliness is contributed; and a low-temperature sintering process is adopted in the subsequent steps, so that the electric energy consumed by equipment can be effectively saved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a front electrode of a solar cell. Background technique [0002] The main production processes of solar cells are: texturing, diffusion, etching, deposition of silicon nitride film, printing of silver paste and sintering. [0003] In the production process of solar cells, it is necessary to deposit an anti-reflection film on the surface of the diffused silicon wafer to reduce the reflection of sunlight on the surface of the silicon wafer. Silicon nitride thin films have the characteristics of high chemical stability, high resistivity, good insulation, high hardness, and good optical properties, and are widely used in solar cells. As an anti-reflection film, silicon nitride film has good optical performance, and its refractive index is about 2.0, which has better anti-reflection effect than traditional silicon dioxide anti-reflection film; at the same time, silic...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 马桂艳宋连胜李倩刘莉丽王静
Owner YINGLI ENERGY CHINA
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