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Erbium ion activated 1.55-micron wave-band gallate laser crystal and its preparation method

A laser crystal and crystal-like technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of low crystal phonon energy, unfavorable 1.55 micron laser operation, etc.

Active Publication Date: 2012-11-07
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention relates to a class of gallate crystals, which have stable chemical properties, high hardness, and good thermal properties, but this type of crystal also has the above-mentioned negative factors that are not conducive to the operation of a 1.55 micron laser: the phonon energy of the crystal is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Weigh 22.59g of CeO 2 , 7.39g of Yb 2 o 3 , 0.717g of Er 2 o 3 , 55.36g of SrCO 3 , 36.70g of Gd 2 o 3 and 106.49 g of Ga 2 o 3 , put these six kinds of raw materials together in an agate mortar, grind and mix evenly, press the mixture into a round cake with a φ50mm molding die and a hydraulic press in 3 times, and place it in a muffle furnace at 1050 o C sintered for 48 hours. Then put the product synthesized by solid phase reaction into φ60×30mm 3 The iridium crucible is placed in a crystal pulling growth furnace and heated and melted. The growth conditions are: melting temperature 1600 o About C, pulling speed 1.0mm / h, rotating speed 15rpm, annealing cooling rate 10 o C / h. Grow to get a size larger than φ20×40mm 3 High quality transparent single crystal Ce 0.35 :Yb 0.1 :Er 0.01 :SrGd 0.54 Ga 3 o 7 . The crystal is suitable for semiconductor laser pumping near the wavelength of 970nm, and outputs laser in the 1.55 micron band.

Embodiment 2

[0023] Weigh 22.59g of CeO 2 , 7.39g of Yb 2 o 3 , 0.717g of Er 2 o 3 , 74g of BaCO 3 , 32.99g of La 2 o 3 and 106.49 g of Ga 2 o 3 , put these four kinds of raw materials together in an agate mortar, grind and mix evenly, press the mixture into a round cake with a φ50mm molding die and a hydraulic press in three times, and place it in a muffle furnace at 1050 o C sintered for 48 hours. Then put the product synthesized by solid phase reaction into φ60×30mm 3 The iridium crucible is placed in a crystal pulling growth furnace and heated and melted. The growth conditions are: melting temperature 1650 o About C, pulling speed 1.2mm / h, rotating speed 15rpm, annealing cooling rate 20 o C / h. Grow to get a size larger than φ20×40mm 3 High quality transparent single crystal Ce 0.35 :Yb 0.1 :Er 0.01 :BaLa 0.54 Ga 3 o 7 .

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Abstract

The invention provides an erbium ion activated 1.55-micron wave-band gallate laser crystal and its preparation method. The general chemical formula of the crystal is Cex:Yby:Erz:AR(1-x-y-z)Ga3O7, wherein Er is activated ion, Yb is sensitized ion, Ce is de-excitation ion, A is at least one of Ca, Sr and Ba, R is at least one of Y, La, Gd and Lu, the values of x, y and z change from 0 to 1 according to laser operation requirements, and x+y+z is less than or equal to 1. The crystal belongs to a tetragonal crystal system and space group is as defined in the specification. The crystal can be used as a gain medium of a diode laser-pumped 1.55-micron wave-band laser. The crystal can grow by a czochralski method. The preparation method requires a simple process and is easy to operate.

Description

[0001] technical field [0002] The invention relates to a class of erbium-activated 1.55-micron band gallate laser crystals and a preparation method thereof. Background technique [0003] Eye-safe 1.55 micron laser has important application prospects in medical treatment, remote sensing detection, communication, radar imaging and nonlinear frequency conversion, and is currently a research hotspot in the field of solid-state lasers. [0004] via erbium ions 4 I 13 / 2 → 4 I 15 / 2 Transition can directly obtain high beam quality and high performance 1.55 micron band laser. Under normal circumstances, the operation mechanism of Erbium ion 1.55 micron laser is: adopt Yb which has a large absorption cross-section for semiconductor laser near the wavelength of 970nm 3+ As a sensitizing ion, through energy transfer, Er 3+ ion population to 4 I 11 / 2 energy level, then through 4 I 11 / 2 → 4 I 13 / 2 radiative and non-radiative transitions that enable laser upper energy levels ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B15/00H01S3/16
Inventor 龚兴红黄艺东陈雨金林炎富黄建华罗遵度
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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