BiCMOS (bipolar complementary metal oxide semiconductor) integrated device based on plane-strained SiGe HBT (heterojunction bipolar transistor) device and fabrication method

Abstract

The invention discloses a BiCMOS (bipolar complementary metal oxide semiconductor) integrated device based on plane-strained SiGe HBT (heterojunction bipolar transistor) device and a fabrication method. The fabrication method comprises preparing a SOI (silicon on insulator) substrate, etching an active region of a bipolar device, growing a collector region of the bipolar device, etching a base region by lithography, growing P-SiGe, i-Si, i-Poly-Si on the base region, preparing deep trench isolation; forming an emitter, a base and a collector, and forming the SiGe HBT device; and etching the active region of a MOS (metal oxide semiconductor) by lithography, continuously growing a Si buffer layer, a strain SiGe layer, and an intrinsic Si layer in the region, respectively forming the active region of an NMOS (N-channel metal oxide semiconductor) and PMOS (P-channel metal oxide semiconductor) device, depositing SiO2 and polysilicon on the active region of the NMOS and PMOS devices, etching to prepare a pseudo gate with a length of 22 to 350nm, forming a lightly-doped source drain and source drain of the NMOS and PMOS devices by self-alignment process, removing the pseudo gate, preparing a gate from a gate dielectric lanthanum oxide and tungsten, metalizing, and etching a lead by lithography to form the BiCMOS integrated device and the circuit. According to the BiCMOS integrated device based on plane-strained SiGe HBT device and the fabrication method provided by the invention, the lightly-doped source drain structure is adopted to effectively suppress the influences of hot carriers on the device performance so as to improve the reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a BiCMOS integrated device based on a plane strain SiGeHBT device and a preparation method. Background technique [0002] Semiconductor integrated circuit technology is the core technology of high-tech and information industries, and has become an important symbol to measure a country's scientific and technological level, comprehensive national strength and national defense strength, while microelectronic technology represented by integrated circuits is the key to semiconductor technology. The semiconductor industry is the basic industry of the country. The reason why it develops so fast is not only the huge contribution of technology itself to economic development, but also its wide applicability. [0003] Gordon Moore, one of the founders of Intel, proposed "Moore's Law" in 1965, which states that the number of transistors on an integrated ...

AI Technical Summary

Problems solved by technology

For example, when the feature size is less than 100nm, due to problems such as tunneling leakage current and reliability, the traditional gate dielectric material SiO 2 Unable to meet the requirements of low power consumption; the short channel effect and narrow channel effect of nanometer devices are becoming more and more obvious, which seriously affects the device performance; traditional lithography technology cannot meet the shrinking lithography precision

Therefore, traditional Si-based process devices are increasingly difficult to meet the needs of design

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