Chemical preparation technology of Cu(InAl)Se2 film

A preparation process and thin film technology, which is applied in the field of photovoltaic cells, can solve the problems of complex process, high cost, and the need for vacuum conditions

Inactive Publication Date: 2015-05-20
YUNNAN NORMAL UNIV
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Problems solved by technology

The patent (application number: 200910237133) adopts vacuum magnetron sputtering method to prepare copper indium selenium or copper indium gallium selenium or copper indium aluminum selenium absorption layer, which has high cost, complicated process and vacuum condition

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  • Chemical preparation technology of Cu(InAl)Se2 film

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Embodiment Construction

[0011] (1) The soda-alkali glass substrate with a size of 10mm×10mm was ultrasonically cleaned for 10 minutes with detergent, distilled water, isopropanone and ethanol in sequence, and dried with nitrogen for 30 minutes;

[0012] (2) Deposit a molybdenum layer precursor with a thickness of 1 μm on the substrate as the back electrode (called the precursor) by radio frequency (RF) magnetron sputtering process;

[0013] (3) Prepare the reaction solution with deionized water: it contains CuSO with a concentration of 0.2 moles 4 7.5 molar solution containing 0.1 molar trisodium citrate solution 7.5 molar solution containing 0.1 molar InCl 3 6.25 moles of solution, 12.5 moles of citric acid solution containing 0.05 moles, 10 moles of 1000 mg selenium solution and 0.1 moles of Al 2 SO 4 The solution is 6.25 moles, and the pH value of the reaction solution is 10;

[0014] (4) Heating the reaction solution to 50±2°C and maintaining the temperature for 10 minutes;

[0015] (5) Hang ...

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Abstract

The invention relates to a chemical preparation technology of a Cu(InAl)Se2 film. The technology is a preparation method of chemical deposition. The method is characterized by: taking soda-lime glass as a substrate; firstly, using a radio frequency (RF) magnetron sputtering method to sputter molybdenum (Mo) metal so as to make a back electrode on the substrate; then, using a chemical bath deposition (CBD) method to deposit a CIAS film on the Mo back electrode. Through using the CBD method to prepare the CIAS film, material consumption is small; expensive vacuum equipment is not needed; a toxic gas does not need to be processed and the large area deposition can be realized. A forbidden band width of the prepared CIAS film is 1.44eV, which is an optimal band gap of a single-junction solar cell. And a luminous absorption coefficient is greater than 10<6>cm<-1>.

Description

Technical field: [0001] The invention relates to a chemical preparation process of a Cu(InAl)Se2 thin film, which belongs to the technical field of photovoltaic cells. Background technique: [0002] In recent years, copper indium selenide (CuInSe 2 , CIS) thin-film solar cells have attracted much attention due to their high conversion efficiency, low cost and stable performance. Among them, the CIS material of the absorbing layer is the key factor affecting the photoelectric conversion efficiency of the battery. CulnSe 2 It is a direct bandgap semiconductor material with high light absorption coefficient. CuInSe can be increased by doping the third or fourth group elements 2 The bandgap width (Eg) and the matching degree of the solar spectrum result in higher conversion efficiency. The copper indium gallium selenide (CIGS) thin-film solar cell produced by this ion replacement evolution has the characteristics of wide bandgap, strong anti-reflection ability, high conversi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C03C17/36
CPCY02P70/50
Inventor 杨培志自兴发杨雯安家才朱勋梦
Owner YUNNAN NORMAL UNIV
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