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Field emission display encapsulating method capable of realizing growth of CuO nano wire in encapsulating process

An encapsulation method and field emission technology, applied in the direction of cathode ray tube/electron beam tube, discharge tube, electrical components, etc., can solve the problems of emission characteristics decline and failure, and achieve the effect of simple production, avoiding damage and saving production cost.

Active Publication Date: 2015-03-25
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the packaging process needs to be carried out at a relatively high temperature, this process will inevitably affect the cold cathode that has been fabricated on the cathode substrate, usually resulting in a decrease in its emission characteristics, and in severe cases it will completely fail

Method used

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  • Field emission display encapsulating method capable of realizing growth of CuO nano wire in encapsulating process
  • Field emission display encapsulating method capable of realizing growth of CuO nano wire in encapsulating process
  • Field emission display encapsulating method capable of realizing growth of CuO nano wire in encapsulating process

Examples

Experimental program
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Effect test

Embodiment 1

[0030] figure 2 Taking the diode structure device as an example, the process flow chart of making FED by one-time sintering is given. Such as figure 2 As shown in a), the cathode substrate 21 uses a glass substrate as a substrate, and an electrode layer 22 is prepared on the glass substrate. The electrode layer can be one or any combination of Cr, Al, Ti, ITO, and the thickness is about 200-600nm. Then use ultraviolet exposure or electron beam exposure to perform photolithography on the region where CuO nanowires need to be grown locally to obtain a photoresist pattern. Then prepare a layer of copper film on the photolithographic substrate by magnetron sputtering, thermal evaporation or electron beam evaporation. The thickness of the copper film is about 500nm~2μm. The power and time of the coating can be adjusted according to the thickness of the copper film. . The photoresist is removed by the stripping process, and the metal copper layer deposited directly on the glas...

Embodiment 2

[0037] image 3 Taking the FED device with gate structure as an example, the specific implementation method of this patent is given. The structure of the cathode substrate is as image 3 As shown in a), the cathode substrate 31 adopts a glass substrate, on which a cathode electrode 32, an insulating layer 33, a grid 34, and an exhaust hole 35 are formed, and a copper film pattern 36 is prepared on the cathode electrode by using photolithography technology combined with coating technology. , the copper film thickness is about 500nm ~ 2μm.

[0038] image 3 b) is a schematic diagram of the anode substrate. The anode substrate 37 is a glass substrate on which a transparent conductive layer 38 and a phosphor layer 39 are fabricated.

[0039] Spacers 310 are evenly placed between the cathode substrate and the anode substrate to ensure insulation between cathode and anode and maintain a certain distance. Then the cathode plate and the anode plate are aligned and fixed with a clamp...

Embodiment 3

[0043] This embodiment takes a field emission display with a diode structure as an example, and provides a process for realizing the growth of CuO nanowires in the packaging process of the field emission display.

[0044] First, the glass substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes, and then blown dry with nitrogen. A magnetron sputtering coater is used to coat a layer of ITO conductive layer on the glass substrate. The thickness of the ITO layer is about 400nm, and then uniformly coat photoresist on the conductive layer ITO, and then perform ultraviolet exposure through a mask. After exposure and development, a copper film is plated by magnetron sputtering. The thickness of the copper film is about 850nm. After coating, the photoresist is removed by a stripping process, leaving a copper film pattern on the substrate.

[0045] A spacer is placed between the cathode and anode substrates, aligned and fixed, and sealed with low-m...

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Abstract

The invention discloses a field emission display encapsulating method capable of realizing growth of a CuO nano wire in an encapsulating process. According to the method disclosed by the invention, preparation of the CuO nano wire by adopting thermal oxidation and sintering of low-melting-point glass powder are synchronously carried out, and a CuO nano wire cold cathode can grow on a cathode substrate of the field emission display while the low-melting-point glass powder is solidified. The method disclosed by the invention has a simple process, a process flow of the field emission display is simplified, manufacturing cost can be saved, and influence of the sintering process in encapsulating to emission characteristic of the CuO nano wire cold cathode also can be avoided.

Description

technical field [0001] The invention relates to the manufacturing technology of a field emission display (FED), more specifically, relates to a field emission display packaging method for realizing the growth of CuO nanowires in the packaging process, and belongs to the field of vacuum microelectronics. Background technique [0002] Field emission display is a new type of flat panel display, which has the advantages of high brightness, high resolution, wide viewing angle, full-color display, low power consumption, etc., and has broad development prospects. [0003] Cold cathode is the core component of field emission display. The cold cathode in the field emission display has developed from the pointed cone-shaped emitter of molybdenum and silicon, the thin-film cold cathode such as diamond and diamond-like carbon, and the carbon nanotube cold cathode to a new type of metal and semiconductor quasi-one-dimensional nano-cold cathode. Representative new quasi-one-dimensional n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/02H01J9/24H01J9/38H01J29/02
Inventor 陈军林琳刘更新许宁生邓少芝
Owner SUN YAT SEN UNIV
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