Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lens for achieving curved-surface-to-plane super-resolution demagnification imaging photo-etching

A super-resolution and curved surface technology, applied in the direction of lens, microlithography exposure equipment, optics, etc., can solve the problems of limited structure and low quality of lithography imaging, achieve the effect of reducing the size of graphics and overcoming the low quality of imaging

Active Publication Date: 2012-08-01
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: aiming at the problem of low imaging quality and limited structure of the existing surface plasmon imaging lithography, an imaging structure combining curved surface and plane is proposed, which can reduce the size of the graphics and realize the Lens for super-resolution zoom-out imaging of planar imaging

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lens for achieving curved-surface-to-plane super-resolution demagnification imaging photo-etching
  • Lens for achieving curved-surface-to-plane super-resolution demagnification imaging photo-etching
  • Lens for achieving curved-surface-to-plane super-resolution demagnification imaging photo-etching

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0030] According to the present invention, a lens for realizing super-resolution zooming imaging lithography from a curved surface to a plane and a manufacturing method thereof, the specific implementation steps are as follows:

[0031] (1) The designed planar multilayer film structure is composed of a metal Ag layer and a dielectric SiO 2 Layer composition, first vapor-deposit Ag layer, then vapor-deposit SiO 2 Layers, alternating 5 groups of 10 layers. The thickness of each layer is 10nm, a total of 100nm;

[0032] (2) The designed curved multilayer film structure is obtained by sputtering. Co-deposition of 10 groups of 20 layers, first depositing Ag and then SiO 2 , alternately depositing 10 groups. Control the thickness of each layer to be 20nm, total thickness=400nm;

[0033] (3) The designed metal mask structure is obtained by magnetron sputtering coating, the metal to be coated is chromium film, the coating power is 700W, and the film thickness is 50nm. Slit the c...

specific Embodiment 2

[0036] Another kind of lens and its manufacturing method for realizing surface-to-plane super-resolution reduction imaging lithography, its specific implementation steps are as follows:

[0037] (1) The designed planar multilayer film structure includes metal layers and dielectric layers. Using the sputtering method, the metal Ag layer is sputtered first, and then the dielectric SiO 2 Layers, alternating 8 groups of 16 layers. The thickness of each layer is 20nm, a total of 320nm, and the surface roughness is required to be ≤2nm;

[0038] (2) The designed curved multilayer film structure is obtained by vapor deposition. A total of 15 groups of 30 layers were evaporated, first the metal Ag layer was evaporated and then SiO 2 Layers, alternately vapor-deposited 15 groups. Control the thickness of each layer to be 20nm, total thickness=600nm;

[0039] (3) The designed metal mask structure is obtained by magnetron sputtering coating, and the coated metal is a chromium film wi...

specific Embodiment 3

[0042] Another kind of lens and its manufacturing method for realizing surface-to-plane super-resolution reduction imaging lithography, its specific implementation steps are as follows:

[0043] (1) The designed planar multilayer film structure is composed of a metal Ag layer and a dielectric SiO 2 Layer composition, depositing Ag layer first, then SiO 2 Layers, alternate 10 groups of 20 layers. The thickness of each layer is 30nm, a total of 600nm;

[0044] (2) The designed curved multilayer film structure is prepared by evaporation. A total of 20 groups of 40 layers were evaporated, first evaporated Ag and then SiO 2 , Alternately evaporate 20 groups. Control the thickness of each layer to be 30nm, total thickness=1200nm;

[0045] (3) The designed metal mask structure is obtained by vapor-deposited film, and the plated metal is a chromium film with a film thickness of 150nm. Make a slit on the chromium film so that the slit width is 150nm and the slit spacing is 500nm;...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
poweraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a lens for achieving curved-surface-to-plane super-resolution demagnification imaging photo-etching, which comprises a plane multilayer metal-medium layer capable of transmitting light, a curved surface multilayer film capable of de-magnifying imaging, a metal mask structure, an adhesive layer and a substrate. The lens is simple and high in feasibility, and the de-magnified multiplying power super-resolution imaging lens with the object surface to be the curved surface and the image surface to be the plane can be obtained simply through conventional gluing, photo-etching and process film coating. The lens can transmit high-frequency information and distinguish pictures below half-wavelength, and has wide application prospect. Simultaneously, the lens broadens the application range of the existing super-resolution demagnification imaging technology.

Description

technical field [0001] The invention relates to the technical field of super-resolution reduction imaging lenses, in particular to a lens for realizing super-resolution reduction imaging lithography from a curved surface to a plane. Background technique [0002] As a new type of nanofabrication technology, surface plasmon super-resolution imaging lithography has the characteristics of high resolution, low cost, and high efficiency, and has attracted extensive attention from scientific researchers. [0003] The physical mechanism of surface plasmon super-resolution imaging is that light waves incident on the metal surface can excite surface plasmon waves, and the metal-dielectric multilayer film can transmit the evanescent light waves carrying the fine structure information of the pattern to the image plane, thereby realizing super-resolution imaging . The lithography structures reported publicly to realize surface plasmon imaging include a flat object plane and an image pla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G02B3/00
Inventor 罗先刚赵泽宇王彦钦冯沁王长涛罗云飞陶兴黄成杨磊磊姚纳
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com