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Ceramic connection method by using high-temperature interlayer material

An intermediate layer, high temperature technology, applied in the field of ceramic connection using high temperature intermediate layer materials, can solve the problems of metal intermediate layer oxidation resistance, poor corrosion resistance, high residual stress, poor wettability, etc., to achieve good connection effect, connection The effect of high strength and stable performance at high temperature

Inactive Publication Date: 2012-07-18
INNER MONGOLIA UNIV OF TECH
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] However, there are still many disadvantages in using metal materials as the intermediate layer: (1) It is not easy to produce good bonding at the interface between ceramics and metals
On the one hand, due to the different lattice types of the two materials, the metal material is a metal bond, while the ceramic material is mostly a covalent bond; on the other hand, the ceramic material has good chemical stability, and usually the wettability of metal to ceramic material Poor, that is, the compatibility of the two materials is poor
(2) The thermal expansion coefficients of ceramics and metals are very different, resulting in excessive residual stress in the joint after connection
(3) The metal intermediate layer has poor oxidation resistance and corrosion resistance, and the joints connected with them are not suitable for complex high-temperature environments
(4) When the metal interlayer connects ceramic materials, brittle compounds are easily formed during the interfacial reaction process, which affects the performance of the connector
[0008] To sum up, at present, there is still a lack of practical high-temperature interlayer materials and connection technologies that can be directly used in the connection of advanced structural ceramics and the joints have stable high-temperature performance at high temperatures.

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  • Ceramic connection method by using high-temperature interlayer material
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preparation example Construction

[0034] The preparation method includes the following steps:

[0035] In step S101, the selected raw material components are blended according to a certain weight percentage;

[0036] In step S102, the raw materials with a good ratio are added to anhydrous ethanol, and ball milling is performed;

[0037] In step S103, a drying oven is used for drying, and the spark plasma sintering technology is used for processing.

[0038] In the embodiment of the present invention, the high-temperature intermediate layer material is Ti 3 SiC 2 The system, the selected raw material composition and weight percentage composition are: Ti: 68-78%, Si: 14-70%, C: 12-13%, TiC: 30-90%, SiC: 22-40%.

[0039] In the embodiment of the present invention, the selected combinations of raw material components and weight percentages are:

[0040] 1. Ti: 68-78%, Si: 14-20%, C: 12-13%;

[0041] 2. TiC: 30-90%, Si: 14-70%;

[0042] 3. Ti: 68-78%, SiC: 22-40%.

[0043] In the embodiment of the present invention, the time for...

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Abstract

The invention belongs to the field of ceramic material preparation and provides a ceramic connection method by using a high-temperature interlayer material. Ti3SiC2 is used as a high-temperature interlayer material, the high-temperature interlayer material and a ceramic material are loaded in a graphite die in a sequence of the ceramic material, the high-temperature interlayer material and the ceramic material, the connection of the ceramic material is realized through a spark plasma sintering technology, and excellent connection effect is achieved during the connection of carborundum ceramic. The high-temperature interlayer material can be directly used for connecting the ceramic material and a ceramic-based composite material without conducting surface pre-coating or other modification treatments to the surface of the ceramic material before connection. The ceramic material connected by the high-temperature interlayer material has high connection strength and stable high-temperature property.

Description

Technical field [0001] The invention belongs to the field of ceramic material preparation, and in particular relates to a method for ceramic connection using a high-temperature intermediate layer material. Background technique [0002] Advanced structural ceramics such as: silicon nitride, silicon carbide, zirconia, alumina, hexagonal boron nitride, because of its excellent high temperature mechanical properties, low thermal expansion coefficient, high thermal conductivity, good thermal shock resistance and light specific gravity, only One third of the general metal is widely used in various harsh high-temperature environments. However, due to the structural characteristics of ceramic materials, such as low fracture toughness, large strength dispersion, poor use reliability, and poor processability, these shortcomings limit their development and application. Specifically, it is manifested in two aspects: First, the inherent defects of large ceramic materials, such as pores, micr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00C22C14/00C22C32/00C22C1/05
Inventor 董红英田鑫马文何伟艳任艳萍丑明月
Owner INNER MONGOLIA UNIV OF TECH
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