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Preparation method for copper zinc tin sulfide thin film material

A thin-film material, copper-zinc-tin-sulfur technology, applied in final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of poor bonding force between metal molybdenum and metal prefabricated layers, affecting the photoelectric conversion efficiency of solar cells, etc. Achieve the effect of reducing carrier recombination centers, reducing production costs, and increasing photoelectric conversion efficiency

Inactive Publication Date: 2012-06-13
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of process requires the use of expensive metal molybdenum as the back contact material, and the bonding force between the metal molybdenum and the metal prefabricated layer is poor. During the high temperature annealing process, there will be voids between the two, which seriously affects the photoelectric conversion of the solar cell. efficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Pretreatment of copper tape as flexible substrate and back contact conductive material

[0024] The pretreatment of copper strip is degreasing, electrochemical polishing and activation. Among them, the degreasing liquid adopts 0.1M / L sodium hydroxide solution; the electrochemical polishing liquid adopts a mixture of 30% sulfuric acid, 30% phosphoric acid, 40% deionized water, and 10g / L polyethylene glycol with a molecular weight of 6000, which is used for polishing. The current density is 10mA / cm 2 1. The temperature of the solution is 80° C.; the activation solution adopts a sulfuric acid solution with a mass fraction of 10%.

[0025] (2) Deposit zinc and tin on the pretreated copper strip to form a metal prefabricated layer

[0026] The deposition method is a magnetron sputtering method, and the deposition method is to deposit metallic zinc first and then deposit metallic tin, and the molar ratio of deposited metallic zinc to metallic tin is 0.2.

[0027] (3) P...

Embodiment 2

[0033] (1) Pretreatment of copper tape as flexible substrate and back contact conductive material

[0034] The pretreatment of copper strip is degreasing, electrochemical polishing and activation. Among them, the degreasing liquid adopts 0.1M / L sodium hydroxide solution; the electrochemical polishing liquid adopts a mixture of 30% sulfuric acid, 10% phosphoric acid, 60% deionized water, and 1 g / L polyethylene glycol with a molecular weight of 6000. The current density is 50mA / cm 2 1. The temperature of the solution is 50°C; the activation solution adopts a sulfuric acid solution with a mass fraction of 30%.

[0035] (2) Deposit zinc and tin on the pretreated copper strip to form a metal prefabricated layer

[0036] The deposition method is an evaporation method, and the deposition method is to deposit metallic tin first and then deposit metallic zinc, and the molar ratio of deposited metallic zinc to metallic tin is 3.

[0037] (3) Put the metal prefabricated layer in a sul...

Embodiment 3

[0043] (1) Pretreatment of copper tape as flexible substrate and back contact conductive material

[0044] The pretreatment of copper strip is degreasing, electrochemical polishing and activation. Among them, the degreasing solution adopts 0.1M / L sodium hydroxide solution; the electrochemical polishing solution adopts a mixed solution of 10% sulfuric acid, 10% phosphoric acid, 80% deionized water, and polyethylene glycol 5g / L with a molecular weight of 6000, which is used for polishing. The current density is 100mA / cm 2 1. The temperature of the solution is 20° C.; the activation solution adopts a sulfuric acid solution with a mass fraction of 50%.

[0045] (2) Deposit zinc and tin on the pretreated copper strip to form a metal prefabricated layer

[0046] The deposition method can be a laser pulse deposition method, and the deposition method is alternate deposition of metal zinc and tin, and the molar ratio of deposited metal zinc to metal tin is 5.

[0047] (3) Put the me...

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Abstract

The invention discloses a preparation method for a copper zinc tin sulfide thin film material. The preparation method comprises the following steps of: performing oil removal, electrochemical polishing and activation pretreatment on the surface of a copper foil substrate; depositing metallic zinc and tin by using one of a magnetron sputtering method, an evaporation method, a pulsed laser deposition method and an electrodeposition method to form a metallic preformed layer; annealing the metallic preformed layer in a sulfur-containing protective atmosphere at high temperature; and placing the annealed metallic preformed layer in an alkaline KCN solution for etching. By the preparation method, a copper belt is adopted as a flexible substrate and a back contact conductive material, so that the usage of expensive metallic molybdenum is greatly reduced, and production cost is decreased; and a Cu-S phase formed by excessive copper is favorable for the growth of copper zinc tin sulfide crystal grains, reduces charge carrier recombination centers and improves photoelectric conversion efficiency. The copper zinc tin sulfide thin film material prepared by the method is easy to produce in large scale, and can be popularized and applied in a thin film solar cell industry.

Description

technical field [0001] The invention discloses a copper-zinc-tin-sulfur (Cu 2 ZnSnS 4 ) A method for preparing a thin film material; it belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] As an inexhaustible and inexhaustible green energy, solar energy has become an effective means to solve the energy crisis in the world today. Photovoltaic power generation is the most important means of economically utilizing solar energy, so research on various solar cells has received more and more attention. [0003] At present, silicon semiconductor is the most widely used photoelectric conversion material for solar cells, and its existing problems, such as high raw material cost, obvious light attenuation effect, and low photoelectric conversion efficiency, have become the main obstacles to the development and application of this type of solar cell. Compound thin-film semiconductor solar cells have become a hot spot in phot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赖延清赵联波李轶刘芳洋李劼刘业翔苏正华张坤贾明
Owner CENT SOUTH UNIV
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