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High heat conduction diamond heat sink material and preparation method thereof

A technology of heat sink material and diamond, which is applied in the field of diamond heat sink materials and its preparation, can solve the problems of effective thermal conductivity or thermal diffusivity reduction, damage to diamond-copper thermal conductivity, etc., and achieve adjustable and low thermal expansion coefficient effect, the effect of high thermal conductivity

Inactive Publication Date: 2012-05-23
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interfacial thermal resistance effect severely compromises the diamond-copper thermal conductivity by reducing the effective thermal conductivity or thermal diffusivity of the composite by one to two orders of magnitude

Method used

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  • High heat conduction diamond heat sink material and preparation method thereof
  • High heat conduction diamond heat sink material and preparation method thereof
  • High heat conduction diamond heat sink material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Example 1: 170 to 200 mesh diamond single crystal particles (average particle size of about 80 μm) and 325 to 400 mesh copper powder are selected. In diamond particles and copper, the volume fraction of diamond particles is 80%.

[0030] according to figure 2 The process flow shown is used to prepare the diamond-copper composite heat sink material. Diamond single crystal particles were boiled in dilute HNO 3 Boil the solution and NaOH solution for 30 minutes, rinse with deionized water to neutrality after cooling, and perform suction filtration treatment in a vacuum equipment. The suction filtration temperature is 500°C and the treatment time is 5 hours to further remove the oxygen and nitrogen adsorbed on the diamond surface. , Water vapor and other impurities.

[0031] According to the set ratio, the diamond particles and copper powder are wet mixed in the mixer for 2 hours, and the wet mixing medium is alcohol. After mixing uniformly, assemble according to the assembly...

Embodiment 2

[0033] Example 2: 170 to 200 mesh diamond single crystal particles (average particle size of about 80 μm) and 325 to 400 mesh copper powder are selected. In diamond particles and copper, the volume fraction of diamond particles is 80%.

[0034] Diamond single crystal particles are in dilute HNO 3 Boil in the solution and NaOH solution for 30 minutes, rinse with deionized water to neutrality after cooling, and perform suction filtration in a vacuum equipment. The filtration temperature is 400℃ and the treatment time is 5h-7h to further remove the oxygen adsorbed on the diamond surface. , Nitrogen, water vapor and other impurities.

[0035] According to the set ratio, the diamond particles and copper powder are wet mixed in the mixer for 2 hours, and the wet mixing medium is alcohol. After the mixing is uniform, assemble according to the assembly drawing of the sintering unit, firstly polish and polish the surface of the sheath 3, degreasing, ultrasonic cleaning, and infrared drying...

Embodiment 3

[0037] Example 3: 325-400 mesh diamond single crystal particles (average particle size about 40 μm) and 325-400 mesh copper powder are selected. In diamond particles and copper, the volume fraction of diamond particles is 80%.

[0038] Diamond single crystal particles are in dilute HNO 3 Boil the solution and NaOH solution for 30 minutes, rinse with deionized water until it is neutral after cooling, and filter with suction at a temperature of 600°C and a processing time of 6 hours. The copper powder is reduced with hydrogen at a temperature of 300°C and a time of 3h. According to the set ratio, the diamond particles and copper powder are wet mixed in the mixer for 2 hours, and the wet mixing medium is alcohol. After mixing uniformly, assemble according to the sintering unit assembly drawing, and assemble the sintering unit assembly. Carry out high temperature and high pressure sintering. The sintering temperature is 900~1100℃, the sintering pressure is 4~5.5GPa, and the sinter...

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Abstract

The invention relates to a high heat conduction diamond heat sink material. The diamond heat sink material comprises, by mass, 0.1-1.5% of Co, and the balance diamond particles and Cu, wherein the content of the diamond particles in the balance diamond particles and Cu is 70-90% by volume. Raw material powder and a Co-containing alloy base which are assembled to form a sintering component undergo high-temperature high-pressure sintering after adjusting sintering parameters, The composite material which forms a diamond-diamond based strong metallurgy combination interface allows the influence of the heat resistance of a heterogeneous material interface to the heat conductivity to be reduced and the top thermal conductivity of the diamond-Cu heat sink material to be 639W.m<-1>.K<-1>. The diamond-Cu heat sink material prepared in the invention, which has the characteristics of high heat conductivity and adjustable heat expansion coefficient, allows the high heat conductivity to be satisfied and the heat expansion coupling with a substrate material to be improved through adjusting the volume fraction of a reinforced phase.

Description

Technical field [0001] The invention relates to a diamond heat sink material and a preparation method thereof, in particular to a diamond-copper composite heat sink material with high thermal conductivity and adjustable thermal expansion matching and a preparation method thereof. Background technique [0002] With the development of high-density, multi-function, and miniaturization of electronic packaging systems, the heat dissipation of electronic devices has become a key issue restricting the development of the electronics industry. There is an urgent need to develop new packaging heat sink materials with high thermal conductivity and matching thermal expansion. Traditional heat dissipation materials, such as Cu, Al, etc., have high thermal conductivity (401W·m respectively) -1 ·K -1 ,218W·m -1 ·K -1 ), but its thermal expansion coefficient is as high as 16.7×10 -6 K -1 , 23×10 -6 K -1 , Which is very different from Si, GaAs and other substrate materials (2.5×10 -6 K -1 , 6.86×1...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22C26/00C22C1/05
Inventor 夏扬谢元锋吕宏
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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