Aluminum nitride aluminum-coated base plate and preparation method thereof

A technology of aluminum nitride aluminum-clad substrate and aluminum nitride ceramics, which is applied in the field of ceramic metallization, can solve the problems of poor cold and thermal shock resistance of aluminum nitride copper-clad substrates, achieve good bonding force, improve wettability, and improve The effect of the surface state

Active Publication Date: 2012-05-16
BYD CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the existing aluminum nitride copper-clad substrate has poor thermal shock resistance, so as to provide an aluminum nitride aluminum-clad substrate with good thermal shock resistance and its preparation method

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  • Aluminum nitride aluminum-coated base plate and preparation method thereof

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preparation example Construction

[0019] The present invention also provides a method for preparing an aluminum nitride ceramic copper-clad substrate, comprising the following steps:

[0020] S1. Form a modified base layer containing ceramic powder and sintering aid on the surface of the aluminum nitride ceramic substrate, the ceramic powder is SiO 2 、Al 2 o 3 At least one of them; the sintering aid is Cu powder, Cu 2 At least one of O powder and CuO powder;

[0021] S2. Sintering the aluminum nitride ceramic substrate with the modified base layer at a high temperature in vacuum or in an inert atmosphere to obtain a precursor of an aluminum nitride aluminum-clad substrate containing an oxide modified layer;

[0022] S3. Vacuum brazing the precursor of the aluminum nitride aluminum-clad substrate and the aluminum sheet through the aluminum-silicon alloy welding sheet to prepare the aluminum nitride aluminum-clad substrate.

[0023] The aluminum nitride substrate used in the present invention is an aluminum ...

Embodiment 1

[0040] 1. Preparation of modified base layer

[0041] An aluminum nitride substrate (manufactured by Fujian Huaqing Electronic Material Technology Co., Ltd., with a thickness of 600 μm) of 15 mm×15 mm was taken.

[0042] Place the aluminum nitride substrate in a vacuum ion coating machine (JIL type vacuum coating machine produced by Shenzhen Zhenhengchang), and the vacuum degree is 5*10 -4 Pa, the bias voltage of the bias power supply is 200V, the power of the bias power supply is 1500W, the duty cycle of the bias power supply is 40%, the target material is the above-mentioned ceramic powder and sintering aid, the ceramic powder is alumina, sintered The auxiliary agent is cuprous oxide, 70 parts by weight of aluminum oxide, 30 parts by weight of cuprous oxide, and the ion plating time is 5 minutes. A modified base layer with a thickness of 1.5 μm was obtained.

[0043] 2. Sintering

[0044] Place the aluminum nitride substrate with a modified base layer on the surface for s...

Embodiment 2

[0049] 1. Preparation of modified base layer

[0050] An aluminum nitride substrate (produced by Fujian Huaqing Electronic Material Technology Co., Ltd., with a thickness of 700 μm) of 15 mm×15 mm was taken.

[0051] Place the aluminum nitride substrate in a vacuum ion coating machine (JIL type vacuum coating machine produced by Shenzhen Zhenhengchang), and the vacuum degree is 6*10 -4 Pa, the bias voltage of the bias power supply is 250V, the power of the bias power supply is 1600W, the duty cycle of the bias power supply is 50%, the target material is the above-mentioned ceramic powder and sintering aid, and the ceramic powder is silicon oxide and oxide Aluminum, copper oxide as sintering aid, 30 parts by weight of silicon oxide, 60 parts by weight of aluminum oxide, 10 parts by weight of copper oxide, and ion plating time of 10 minutes. A modified base layer with a thickness of 2 μm was obtained.

[0052] 2. Sintering

[0053] The aluminum nitride base material with modi...

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Abstract

The invention provides an aluminum nitride aluminum-coated base plate and a preparation method thereof. The base plate comprises an aluminum nitride ceramic substrate and an aluminum layer positioned on at least one surface of the aluminum nitride ceramic substrate, wherein an oxide modification layer and an aluminum-silicon alloy soldering terminal layer are sequentially arranged between the aluminum nitride ceramic substrate and the aluminum layer, and the modification layer contains Cu2O and also contains at least one group of the following two groups of compounds: (1) CuAlO2, CuAl2O4 and Al2O3; and (2) CuSiO2 and SiO2. The aluminum nitride aluminum-coated base plate provided by the invention has good binding force and strong heat shock resistance.

Description

technical field [0001] The invention relates to an aluminum nitride-coated aluminum substrate and a preparation method thereof, belonging to the field of ceramic metallization. Background technique [0002] With the development of electronic devices, Al as the packaging material of traditional power hybrid integrated circuits 2 o 3 And BeO ceramics, due to their own performance, environmental protection, cost and other factors, can no longer meet the needs. Therefore, a new type of ceramic with superior comprehensive performance - AlN (aluminum nitride) ceramics will become the traditional Al 2 o 3 and alternative materials for BeO ceramics. with Al 2 o 3 Compared with BeO ceramics, AlN ceramics not only have higher thermal conductivity (theoretical thermal conductivity reaches 320W / mK), but also have good electrical properties and mechanical strength, and its thermal expansion coefficient matches well with semiconductor materials such as Si and Ge. Ideal power electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/02
Inventor 任永鹏林信平
Owner BYD CO LTD
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