Production method of metal-silicon nitride-metal capacitor
A technology of metal capacitors and silicon nitride, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of increasing manufacturing cost burden, achieve the effect of improving breakdown voltage, increasing capacitance, and improving performance
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[0041] First deposit a low-k value dielectric layer, figure 1 A schematic cross-sectional view of a low-k dielectric layer is shown. The MOM region is then formed by photolithography and etching, figure 2 A schematic cross-sectional view of the low-k dielectric layer after photolithography and etching of the MOM capacitor region is shown. Then, high-k silicon nitride is deposited by plasma-enhanced chemical vapor deposition (PECVD). The silicon nitride deposition is completed by a two-step cycle of silicon nitride deposition-oxygen-containing gas treatment. The oxygen-containing gas used is Nitric oxide, oxygen-containing gas treatment gas flow rate of 3000sccm, treatment temperature of 400 degrees Celsius, each silicon nitride deposition thickness of 2 nm, using a two-step cycle of deposition silicon nitride-oxygen-containing gas treatment to achieve the final required nitrogen Silicon thickness. image 3 A schematic cross-sectional view showing the mixed layer of low-k d...
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