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Dielectric adjustable compound film for stress auxiliary modulation and preparation method thereof

A composite film and stress technology, applied in chemical instruments and methods, components of fixed capacitors, fixed capacitor dielectrics, etc., can solve problems such as unreachable and compositional deviations, and achieve excellent temperature stability, excellent composition stability and temperature The effect of stability

Active Publication Date: 2012-05-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, under current conditions PST40 ((Pb 0.40 Sr 0.60 )TiO 3 ) has high dielectric tunability, and the composition can be designed as PST40 during preparation. However, composition deviations are likely to occur in the mass production process. Since the dielectric tunability of PST materials is sensitive to composition, the original design of this Materials with high dielectric tunability may not achieve the expected results due to compositional deviations

Method used

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  • Dielectric adjustable compound film for stress auxiliary modulation and preparation method thereof
  • Dielectric adjustable compound film for stress auxiliary modulation and preparation method thereof
  • Dielectric adjustable compound film for stress auxiliary modulation and preparation method thereof

Examples

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preparation example Construction

[0033] In the preparation of composite film of the present invention, adopted general-purpose sol-gel method, specifically as follows:

[0034] 1) Preparation of doped PT sol: heat the mixed solution of acetic acid and ethylene glycol methyl ether as a solvent (the volume percentage of acetic acid is 80%~90%) to 40~70 ℃, and then put in lead acetate powder, zinc acetate Powder (or ferric nitrate powder, cobalt chloride powder), liquid butyl titanate, stirring continuously for 12 to 24 hours to obtain doped PT sol. The molar ratio of Pb and Ti elements is 1:1, the Pb concentration is controlled at 0.03-0.1 mol / L, and the molar ratio of Zn (or Fe, Co) to Pb elements is: 0.01-0.03:1.

[0035] 2) Using the sol prepared in step 1), plate a doped PT stress-inducing layer on the ITO glass substrate by dipping and pulling. The substrate is immersed in the sol for a moment, and after staying for 10 to 25 seconds, the substrate is pulled out of the sol at a pulling speed of 2 to 6 cm / m...

Embodiment 1

[0042] Heat the mixed solution of acetic acid and ethylene glycol methyl ether as a solvent (the volume percentage of acetic acid is 80%) to 40°C, add lead acetate powder, zinc acetate powder, and liquid butyl titanate in sequence, and continue stirring for 12 hours to obtain Doped with PT sol. The molar concentrations of Pb and Ti elements are both controlled to be 0.03 mol / L, and the molar ratio of Zn and Pb elements is 1:100 to form Zn with a concentration of 0.03 mol / L. 2+ Doped with PT sol.

[0043] Apply the above-mentioned Zn-doped PT sol, immerse the ITO / glass substrate, pull the substrate at a pulling speed of 2 cm / min after staying for 10 minutes, and place the sample horizontally to dry naturally to obtain a dry film; directly in a furnace at 550 °C After rapid heat treatment for 4 min, it was quickly taken out and cooled naturally in air at room temperature to obtain a Zn-doped PT stress-inducing layer. XRD pattern of Zn-doped PT stress-inducing layer figure 2 ...

Embodiment 2

[0047] Heat the mixed solution of acetic acid and ethylene glycol methyl ether as a solvent (the volume percentage of acetic acid is 85%) to 40°C, add lead acetate powder, iron nitrate powder, and liquid butyl titanate in sequence, and continue stirring for 18 hours to obtain Doped with PT sol. The molar concentrations of Pb and Ti elements are both controlled to be 0.07 mol / L, and the molar ratio of Fe and Pb elements is 2:100, forming Fe with a concentration of 0.07 mol / L 3+ Doped with PT sol.

[0048] Apply the above-mentioned Fe-doped PT sol, immerse the ITO / glass substrate, pull the substrate at a pulling speed of 4 cm / min after staying for 20 seconds, and place the sample horizontally to dry naturally to obtain a dry film; directly in a furnace at 580 °C After rapid heat treatment for 6 min, it was quickly taken out and cooled naturally in air at room temperature to obtain a Fe-doped PT stress-inducing layer. XRD pattern of Fe-doped PT stress-inducing layer figure 2 ...

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Abstract

The invention discloses a dielectric adjustable compound film for stress auxiliary modulation and a preparation method thereof. An indium tin oxide (ITO) conducting layer, a platinum (PT) stress induction layer and a phthalylsulfathiazole (PST) film are sequentially plated onto the positive surface of a base plate from top to bottom, the PT stress induction layer is in a perovskite phase crystal structure and is mixed with impurities, and the impurities are metal ions with the ion dimensions greater than the ion dimension of titanium (Ti) and with the valence smaller than the valence of Ti. The preparation process is simple, excellent ingredient stability and temperature stability can be realized through the dielectric adjustability of the obtained compound film, and the method is very suitable for the industrial production of the dielectric adjustable film.

Description

technical field [0001] The invention belongs to the technical field of dielectric adjustable thin films, and relates to a stable dielectric adjustable thin film and a preparation method thereof. Background technique [0002] The phase shifter is an important device. The new generation of phase shifter is a dielectric phase shifter. The dielectric phase shifter has many advantages, such as simple structure, small size, light weight, low power consumption, fast response speed, and low insertion loss. It is small and cheap, and there are two ways of phase shifting: digital and analog, which can meet the needs of various occasions. The dielectric phase shifter, also known as the ceramic phase shifter, utilizes the characteristic that the dielectric constant of some low-loss nonlinear microwave dielectric ceramic materials changes with the strength of the applied electric field. The size is used to control the delay in the signal transmission process, so as to achieve the purpos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/04B32B15/00H01G4/10
Inventor 杜丕一郑赞宋晨路翁文剑韩高荣赵高凌沈鸽徐刚张溪文
Owner ZHEJIANG UNIV
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