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Preparation method of compound thin film for solar battery

A technology for preparing solar cells and thin films, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of unsuitable continuity, high-capacity and low-cost industrial production, photovoltaic cells that are difficult to form a competitive advantage, production technology and cost. and other problems, to achieve the effect of short annealing time, large grain size and short production cycle

Active Publication Date: 2011-10-12
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to defects such as complex process, poor repeatability, and long cycle, these process technologies are not suitable for continuous, high-capacity, and low-cost industrial production
Some companies, such as Solyndra and Nanosolar in the United States, use paste printing technology to achieve large-scale production of CIGS thin-film cells. Due to production process and cost issues, it is still difficult to form a competitive advantage in the photovoltaic cell market

Method used

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  • Preparation method of compound thin film for solar battery
  • Preparation method of compound thin film for solar battery
  • Preparation method of compound thin film for solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Fabrication of CuIn with a brass structure phase with a thickness of 1000 nm at a sputtering power of 3 kW 1-x Ga x Se 2-y S y film. Such as figure 1 Shown, the present invention is preparing CuIn 1-x Ga x Se 2-y S y For the thin film, a continuous multi-chamber equipment and automatic control system are used to realize the deposition preparation, rapid heat treatment, cooling and passivation annealing of the thin film in a closed state. The specific steps are as follows:

[0023] 1. Put the cleaned and dried glass substrate or the Mo-coated glass substrate on the substrate holder, and pass the equilibrium gas Ar into the transition chamber 9 to an atmospheric pressure of 1.0×10 5 Pa, open the gate valve 1, the substrate holder enters the transition chamber 9 under the action of the transmission system, close the gate valve 1, pump the transition chamber 9 to 1.0×10 -5 After Pa, the balance gas Ar is introduced to 0.8Pa,

[0024] 2. Open the gate valve 2, wai...

Embodiment 2

[0032] Preparation of CuIn with chalcopyrite structure phase with a thickness of 1500 nm at a sputtering power of 6 kW 1-x Ga x Se 2-y S y film.

[0033] Using the same steps as in Example 1, the advancing speed of the substrate in the deposition chamber was 15 mm / min, and a little H was introduced during sputtering. 2 S. Different sputtering power on CuIn 1-x Ga x Se 2-y S y The microstructure of the film has a significant impact, and the surface morphology and crystallographic properties also change accordingly, such as Figure 4 shown.

Embodiment 3

[0035] Preparation of CuIn with chalcopyrite structure phase with a thickness of 1000 nm at a sputtering power of 6 kW 1-x Ga x Se 2-y S y film.

[0036] Using the same steps as in Example 1, the advancing speed of the substrate in the deposition chamber was 20 mm / min, and a little H was introduced during sputtering. 2 S. CuIn 1-x Ga x Se 2-y S y The thickness of the film has a significant effect, as Figure 5 shown.

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Abstract

The invention discloses a preparation method of a compound thin film for a solar battery. The method comprises the following steps of: firstly, sputtering a copper-indium-gallium-selenium (CIGS) quaternary compound target by using a direct-current pulse power supply, and depositing an amorphous or nano crystalline thin film material with uniform thickness, uniform components and ideal element proportions on a glass substrate at a low temperature; secondly, quickly and thermally treating the thin film in a heat field formed by a resistance heat source and a halogen tungsten lamp tube heat source to restrain the loss of an element Se so as to obtain a CIGS thin film with high crystallinity, large crystallite dimension, high compactness and good chalcopyrite structural phases, and feeding a proper amount of H2Se+Ar or H2S+Ar mixed gas into the heat field for compensation; thirdly, quickly transferring the thin film to an H2S+Ar atmosphere and suddenly cooling the thin film; and finally, performing low-temperature annealing on the CIGS thin film under the atmosphere of H2 and Ar mixed gas so as to eliminate the stress and an inner defect of the thin film and passivate a current carrier compound center.

Description

[0001] technical field [0002] The invention belongs to the technical field of new energy, and in particular relates to a preparation method of a photoelectric thin film material for a solar cell. technical background [0003] The current shortage or depletion of traditional fossil fuels, especially the control of greenhouse gas emissions in human development and the advocacy of low-carbon economy, make the development of renewable energy more urgent. Because solar energy is clean, non-polluting, and inexhaustible, it has become an important part of the sustainable development energy strategy of various countries. Solar cells, as an effective means of utilizing solar energy, have broad prospects for development. Currently commercialized solar cells are mainly crystalline silicon solar cells. This type of solar cell has a mature production process, high conversion efficiency and strong stability. However, the efficiency of this type of cell has almost reached the limit, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 彭寿王伟王芸向光
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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