Thermally reactive resist material, laminated body for thermal lithography using the material, and mold manufacturing method using the material and the laminated body

A thermal reaction and resist technology, which is applied in the field of laminates for thermal lithography, can solve the problems of low precision pattern processing, loss of uniformity, difficulty in controlling pattern size, etc.

Inactive Publication Date: 2011-09-14
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a problem that as the film thickness increases, the uniformity in the film thickness direction will be lost after exposure. As a result, the processing accuracy of the fine pattern not only in the depth direction but also in the direction of the film surface will also decrease.
However, only random sea-island structures can be formed, and it is difficult to control the pattern size of uniform concave-convex or linear-shaped fine patterns, etc.

Method used

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  • Thermally reactive resist material, laminated body for thermal lithography using the material, and mold manufacturing method using the material and the laminated body
  • Thermally reactive resist material, laminated body for thermal lithography using the material, and mold manufacturing method using the material and the laminated body
  • Thermally reactive resist material, laminated body for thermal lithography using the material, and mold manufacturing method using the material and the laminated body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0159] Select Cr 1-x o x , Nb 1-x o x 、 Ta 1-x o x 、Ti 1-x o x As a transition metal heat-reactive resist material. In addition, the etch layer chooses SiO 2 .

[0160] First, a film of 350 nm was formed under the conditions in Table 3 below on a glass flat substrate of 50 mmφ by a sputtering method using a SiO2 target. Next, a Cr target of 40 nm was formed under the conditions in Table 3 using a Cr target 1-x o x membrane. For heat reactive resist material Nb 1-x o x 、 Ta 1-x o x 、Ti 1-x o x , and also the first SiO with a film thickness of 350nm 2 Film formation, after that, under the conditions in Table 3, Nb 1-x o x 、 Ta 1-x o x 、Ti 1-x o x film forming.

[0161] [table 3]

[0162]

[0163] Table 3 shows the X values ​​obtained by analyzing the metal-to-oxide ratios of the deposited heat-reactive resist materials by fluorescent X-rays. In addition, under the same conditions as above, only the respective heat-reactive resist materials were form...

Embodiment 2

[0176] Select Sn 1-x o x , Pb 1-x o x As a heat-reactive resist material for group XII-XV elements. Same as embodiment 1, these heat-reactive resists are also under the conditions shown in table 3, respectively on SiO with a film thickness of 350nm 2 film-on-film.

[0177] The heat-reactive resist after stacking was analyzed by fluorescent X-ray, and the X value obtained is shown in Table 3. In addition, under the same conditions as above, only the respective heat-reactive resist materials were formed into a film, and XRD analysis was performed, and all the materials were amorphous in which no clear diffraction pattern could be obtained. As in Example 1, the above-mentioned film-formed resist layer was exposed.

[0178] Next, the heat-reactive resist exposed by the above-mentioned exposure machine is developed. About image development also, it carried out under the conditions shown in Table 4 similarly to Example 1.

[0179] The surface shape and cross-sectional shape ...

Embodiment 3

[0183] In addition to choosing Cr 1-x o x As a transition metal heat-reactive resist material, Te 1-x o x Film formation, exposure, and image development were performed in the same manner as in Example 1 except for the etching layer. Te 1-x o x The film-forming conditions are shown in Table 3.

[0184] Next, using the heat-reactive resist as a mask, Te 1-x o x of etching. Dry etching using CF 4 As an etching gas, it carried out under the conditions of 5 Pa of processing gas pressure, 400 W of processing electric power, and 20 minutes of processing time. After etching, SEM (scanning electron microscope) was used to observe its surface shape and cross-sectional shape again, and the etching layer depth (nm) and resist film thickness (nm) constituting the aspect ratio shown in Table 4 were observed, and the etching layer reflected While the width shape of the mask is patterned, the mask maintains its shape without being etched.

[0185] Only the heat-reactive resist is ...

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Abstract

A thermally reactive resist material is characterized in that the boiling point of a fluoride, i.e., an element of the material, is 200 DEG C or higher. Thus, the thermally reactive resist material having high resistance against dry etching to be performed so as to form a pattern having a large groove depth by using a chlorofluorocarbon gas is provided.

Description

technical field [0001] The present invention relates to a heat-reactive resist material having high resistance to dry etching using a fluorocarbon gas, a laminate for thermal lithography using the same, and a method for manufacturing a mold using the same. Background technique [0002] In recent years, in the fields of semiconductors, optical and magnetic recording, and the like, demands for higher densification and higher integration have increased, and fine patterning techniques of hundreds to tens of nm or less have become necessary. Therefore, in order to realize these micropattern processing, the research on the element technology of each process such as mask, stepper, exposure, and resist material is in full swing. [0003] For example, in the process of masking and stepping machines, a special mask called a phase shift mask is used to improve the precision of fine pattern processing by giving light a phase difference and the effect of interference, or in the process o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/40
CPCB82Y40/00B82Y10/00G03F7/0002G11B7/261Y10T428/31504Y10T428/31678G03F7/0045G03F7/0046G03F7/40
Inventor 三田村哲理古谷一之中川义清前田雅俊
Owner ASAHI KASEI KK
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