Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof

Abstract

The invention relates to an enhanced AlGaN / GaN HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. The device comprises an AlGaN / GaN heterojunction structure located on the surface of a substrate and gate, source and drain electrode structures, wherein F ion or Cl ion fixed negative charges are arranged in a gate dielectric film material. In the invention, through introducing the F ion or Cl ion fixed negative charges into a gate dielectric film and controlling the electric charge quantity of the introduced fixed negative charges, the threshold voltage of a transistor is regulated and the enhanced AlGaN / GaN HEMT device with the threshold voltage greater than zero is realized. In the invention, the enhanced AlGaN / GaN HEMT device structure is obtained though a method of introducing the fixed negative charges into the gate dielectric film material; interface characteristics of the AlGaN / GaN heterojunction are not influenced so that the performance degeneration of the device is not caused; the process is simple and controllable and is compatible with the manufacturing process of a depletion mode (normally-on) AlGaN / GaN HEMT device; the source-drain saturation current density and the gate-drain current of the manufactured device for manufacturing a GaN enhanced effect transistor are small; and therefore, the device is particularly suitable for developing a GaN logic circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a semiconductor field effect transistor and a preparation method thereof, in particular to an AlGaN / GaN heterojunction HEMT device and a preparation method thereof. Background technique [0002] Compared with high electron mobility transistors (HEMTs) based on AlGaAs / GaAs (AlGaAs / GaAs) heterojunctions, HEMT devices based on AlGaN / GaN (AlGaN / GaN) heterojunctions have the following advantages: [0003] 1. The two-dimensional electron gas (2DEG) concentration at the AlGaN / GaN heterojunction interface is relatively high (up to 10 13 em -2 ), which is nearly an order of magnitude higher than the 2DEG concentration at the AlGaAs / GaAs heterojunction interface. Therefore, HEMT devices based on AlGaN / GaN heterojunctions have higher output power densities. As a mass-produced product, the power density of HEMT devices based on AlGaN / GaN heterojunction has reached more than 10W...

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Problems solved by technology

[0013] Although this method is effective, its biggest problem is that it is difficult to accurately control the thickness of the AlGaN barrier layer in the gate area due to the difficulty in monitoring the etch rate.

[0015] Although this method avoids the disadvantages of the above two methods, its biggest problem is that the F ion implantation of the AlGaN barrier layer in the gate region will destroy the characteristics of the AlGaN / GaN heterojunction interface and degrade the performance of the GaN enhanced HEMT device. As a result, the performance of the developed GaN integrated circuit is poor

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