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Method for preparing diamond substrate for high-heat-conductivity integrated circuit

An integrated circuit and diamond technology, which is applied in the field of preparing doped diamond film composite substrates for high thermal conductivity electronic devices, can solve the problems of unfavorable electronic device production, low diamond film strength, and inability to solve heat dissipation problems of high-power devices.

Active Publication Date: 2011-08-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to make the diamond film have semiconductor characteristics, it needs to be doped in the diamond film. Generally, the diamond film with doped elements is grown on the silicon substrate, but it cannot solve the heat dissipation problem of high-power devices, and the overall natural doping elements The strength of the supporting diamond film is low, which is not conducive to the production of electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take the plasma spraying method as an example to illustrate the specific implementation steps of the present invention as follows:

[0027] Molybdenum with a diameter of 60 mm is selected as the substrate, the doping element is boron, the boron source is loaded with liquid trimethyl borate and hydrogen gas is used, and B-doped and non-doped diamond films are deposited by plasma jet method. Firstly, the molybdenum substrate is ground with diamond paste, and the molybdenum substrate is cleaned with an ultrasonic cleaner. After drying, it is placed in a vacuum chamber of the plasma jet method. The distance between the anode and the substrate is 20mm, and the vacuum reaches the ultimate vacuum. According to the ratio, hydrogen and argon are introduced to ignite the arc. The hydrogen gas is 7L and the argon gas is 2.5L. The power supply parameters are arc current 105A and arc voltage 106V respectively. , the flow rate of methane is 80Sccm, and after 2 hours of deposition, hy...

Embodiment 2

[0029] Take the plasma spraying method as an example to illustrate the specific implementation steps of the present invention as follows:

[0030] The graphite Ti transition layer with a diameter of 60 mm is selected as the substrate, the doping element is boron, the boron source is loaded with liquid trimethyl borate and hydrogen gas is used, and B-doped and non-doped diamond films are carried out by plasma jet method deposition. First, the substrate is ground with diamond paste, and the molybdenum substrate is cleaned with an ultrasonic cleaner. After drying, it is placed in a plasma jet vacuum chamber. The distance between the anode and the substrate is 40mm, and the vacuum reaches the ultimate vacuum. , according to the ratio of hydrogen and argon into the arc ignition, hydrogen 7.5L, argon 3L, the power supply parameters are arc current 108A, arc voltage 104V, when the substrate temperature rises to 870 ℃, methane gas is introduced to nucleate, The methane flow rate is 8...

Embodiment 3

[0032] Take the plasma spraying method as an example to illustrate the specific implementation steps of the present invention as follows:

[0033]The graphite Mo transition layer with a diameter of 60 mm is selected as the substrate, the doping element is boron, the boron source is loaded with liquid trimethyl borate and hydrogen gas is used, and the B-doped and non-doped diamond films are carried out by plasma jet method deposition. First, the substrate is ground with diamond paste, and the molybdenum substrate is cleaned with an ultrasonic cleaner. After drying, it is placed in a plasma jet vacuum chamber. The distance between the anode and the substrate is 40mm, and the vacuum reaches the ultimate vacuum. , according to the proportion of hydrogen and argon into the arc ignition, hydrogen 7L, argon 2.5L, power supply parameters are arc current 105A, arc voltage 106V, when the substrate temperature rises to 850 ℃, methane gas is introduced to nucleate, The methane flow rate ...

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Abstract

The invention belongs to the technical field of preparation of substrate materials for semiconductor basic circuits and particularly provides a method for preparing a composite doped diamond-film substrate for a high-heat-conductivity electronic device. The method comprises the following steps of: firstly carrying out high-density diamond nucleation growth on a metal substrate or a graphite transition layer substrate, depositing an element-doped diamond film, and carrying out the growth of the diamond film to reach a required thickness; carrying out vacuum heat treatment on a diamond gradient composite substrate after demoulding for homogenizing and destressing; and carrying out double-surface grinding and polishing on the doped diamond gradient composite substrate and meeting the requirements on the surface finish quality and the thickness of a substrate for a semiconductor integrated circuit. The invention has the advantages that a boron-doped diamond film has high electron and hole mobility; a boron-undoped diamond film is taken as a substrate support of the doped diamond film; and the heat conductivity of the relatively thicker boron-undoped diamond film is five times of that of copper, thus the heat can be transferred to a radiator in time.

Description

technical field [0001] The invention belongs to the technical field of base material preparation for semiconductor basic circuits; in particular, it provides a method for preparing a doped diamond film composite substrate for high thermal conductivity electronic devices. Background technique [0002] CVD diamond film, which can be attached to the surface of the substrate in the form of a film, or can be self-supporting to form a film. Diamond has many unique and excellent properties, it is the hardest material (104kg / mm 2 ), but also has the highest strength, elastic modulus and the largest thermal conductivity (20W / cm K). Electrically, it is a very good insulating material (resistivity 10 11 ~10 16 Ωcm), has a very wide forbidden band (5.5eV), and the mobility of carriers is high (electron: 1800cm 2 / Vs, cavity: 1600cm 2 / Vs), the saturation velocity of both electrons and holes is high, and the dielectric strength is very high (10 7 V / cm). Diamond doped with Group II...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/04C30B25/02C30B29/04
Inventor 李成明刘金龙张营营陈良贤黑立富吕反修
Owner UNIV OF SCI & TECH BEIJING
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