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Diamond/copper high-thermal conductivity composite material and preparation method thereof

A composite material and diamond technology, which is applied in the field of diamond/copper high thermal conductivity composite material and its preparation, can solve the problems of high cost of vacuum equipment, small volume of composite material, and little application significance, and achieve good thermal conductivity and near net shape The effect of high levelization and reduction of interface thermal resistance

Active Publication Date: 2011-06-29
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 1995, the United States used the vacuum infiltration method to prepare a diamond / copper composite material that can be used as a substrate for a multi-chip template, with a thermal conductivity of 420W / (m K) and a CET of 5.48-6.5×10 -6 K, the preparation process requires a higher cost of vacuum equipment
In 2003, Japanese scientists prepared a diamond / copper composite material through high temperature and high pressure method, with a thermal conductivity of 742W / (m K). Russian scientists also obtained a thermal conductivity of 900W / (m K) through high temperature and high pressure preparation technology The high temperature and high pressure process conditions are extremely harsh, and the volume of the obtained composite material is very small, so the application significance is not great

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Put the pure chromium powder and 8μm diamond particles into the mixing tank together, take out the mixture for 48 hours, treat it in an argon protective atmosphere at 400°C for 0.5 hours, and put 80g / L copper pyrophosphate, potassium pyrophosphate 200g / L, ammonium citrate 60g / L electrodeposition solution, using a current density of 2.0A / dm 2 , a stirring speed of 600r / min, and a temperature of 50°C for electrodeposition preparation for 15 hours. The thermal conductivity of the obtained composite material is 680W / (m·K), and the coefficient of linear expansion is 7.2×10 -6 K, the volume fraction of the reinforcing body is 45%.

Embodiment 2

[0021] Put pure molybdenum powder and 0.5μm diamond particles into the mixing tank together, take out the mixture for 72 hours, treat it in an argon protective atmosphere at 300°C for 2 hours, and put in 60g / L copper pyrophosphate, pyrophosphoric acid after cooling with the furnace In the electrodeposition solution of potassium 300g / L and ammonium citrate 60g / L, the current density is 0.5A / dm 2 , a stirring speed of 200r / min, and a temperature of 50°C for electrodeposition preparation for 12 hours. The thermal conductivity of the obtained composite material is 380W / (m·K), and the coefficient of linear expansion is 11.6×10 -6 K, the volume fraction of the reinforcing body is 15%.

Embodiment 3

[0023] Put pure titanium powder and 30μm diamond particles into the mixing tank together, take out the mixture for 68 hours, treat it in an argon protective atmosphere at 600°C for 1 hour, and put in copper pyrophosphate 30g / L, potassium pyrophosphate 400g / L, ammonium citrate 60g / L electrodeposition solution, using a current density of 3.5A / dm 2 , a stirring speed of 500r / min, and a temperature of 50°C for electrodeposition preparation for 10 hours. The thermal conductivity of the obtained composite material is 480W / (m·K), and the coefficient of linear expansion is 8.6×10 -6 K, the volume fraction of the reinforcing body is 40%.

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Abstract

The invention provides a diamond / copper high-thermal conductivity composite material and a preparation method thereof. The composite material comprises a base material copper, and reinforced materials are diamond particles coated with chromium or molybdenum or tungsten or titanium, wherein the volume fraction of the reinforced materials in the composite material is 15-65%. The preparation method of the composite material comprises the following steps: firstly, mixing the diamond particles with pure chromium powder or molybdenum powder or tungsten powder or titanium powder in a mixer; carryingout high-temperature treatment; and then, preparing the high-thermal conductivity composite material by adopting an electroplating process. The invention solves the problem of poor diamond / copper interface combination, and avoids the problems of diamond graphitization and the like at high temperature. The prepared composite material has higher thermal conductivity and lower thermal expansion coefficient, thereby meeting the requirements of high-power integrated circuit packaging materials.

Description

technical field [0001] The invention relates to a diamond / copper high thermal conductivity composite material and a preparation method thereof, belonging to the technical field of metal matrix composite materials. Background technique [0002] With the continuous development of electronic technology, the degree of integration of electronic components is getting higher and higher, the computing speed of chips is getting faster and faster, and the heat generation is also increasing. Microprocessors and power semiconductor devices are often used in the application process due to temperature Too high to work properly. Among metal materials, copper and aluminum have high thermal conductivity, but the thermal expansion coefficient is quite different from Si and GaAs, etc., which will generate greater stress when the device is working; Invar and Kovar alloys have very low thermal expansion coefficient and good weldability , but the thermal conductivity is less than 20W / (m K), whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22C26/00C22C1/10C25C1/12
CPCY02P10/20
Inventor 刘永正崔岩
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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