Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Adamas wafer and production method thereof

A production method and diamond technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost, small application range, small diamond size, etc., and achieve stable performance, low price, and good thermal conductivity.

Active Publication Date: 2011-04-27
HENAN UNION ABRASIVES
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention: provide a diamond wafer and its production method, which solves the problems of small size, small application range and high cost of diamond at present, and provides a technical platform for developing various unique properties of diamond

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adamas wafer and production method thereof
  • Adamas wafer and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1: A kind of diamond wafer and production method thereof

[0032] After sieving and selecting the hexahedral diamond abrasive, accurately weigh 10g of 70-80 mesh (about 0.2mm) diamond abrasive, put it in a 1000ml flask, add 2% oleic acid triethanolamine aqueous solution 800ml, Ultrasonic dispersion is used to uniformly disperse the diamond abrasive in the dispersion medium to form a stable dispersed suspension.

[0033] Use negative pressure (0-0.1Pa) to separate the diamond abrasive from the suspension, put it into a porcelain crucible, and dry it in an electric drying oven at 80-110°C for 3-6 hours, so that the surface of the diamond abrasive is basically evenly covered by the dispersion medium ; Then place the diamond abrasives in a clean chromium cup mold (the thickness of the chromium cup mold is 0.13cm), arrange the diamond abrasives tightly through a pressure head with the same inner diameter as the chromium cup, and cover a piece of iron-nickel alloy ...

Embodiment 2

[0042] Embodiment 2: a kind of diamond wafer and production method thereof

[0043] After sieving and selecting the hexahedral diamond abrasive, accurately weigh 10g of 35-40 mesh (about 0.45mm) diamond abrasive, put it in a 1000ml flask, add 800ml of 5% stearic acid ethanol solution, and use Ultrasonic dispersion enables the diamond abrasive to be uniformly dispersed in the dispersion medium to form a stable dispersed suspension. The diamond abrasive is separated from the suspension by negative pressure filtration, put into a porcelain crucible, and the porcelain crucible is dried in an electric heating oven at 100°C for 5 hours to remove the dispersion medium; then the diamond abrasive is placed in In the molybdenum cup, the diamond abrasive is compressed by a pressure head, and a nickel-manganese-cobalt alloy sheet is covered on the diamond layer as a catalyst (nickel accounts for 70%, manganese accounts for 25%, and cobalt accounts for 5%) ， Then buckle a molybdenum cup a...

Embodiment 3

[0049] Embodiment 3: A kind of diamond wafer and production method thereof

[0050] After sieving and selecting the hexahedral diamond abrasive, accurately weigh 10g of 18-20 mesh (about 0.9mm) diamond abrasive, put it in a 1000ml flask, add 5% ammonium polyacrylate aqueous solution 400ml and 2% Polyoxyethylene (20) sorbitan monostearate (Tween-60) aqueous solution 400ml, use the method of electric stirring to make the diamond abrasive evenly dispersed in the medium to form a stable dispersed suspension, then add 5% 20ml of oxalic acid aqueous solution destroys the suspension to make it flocculate and settle, centrifuge and dehydrate, dry, and then place it in a vacuum high-temperature furnace, treat it at 500°C for 4 hours under vacuum conditions (<10 Pa), remove the dispersion medium, and then place it in a zirconium cup In the method, after the diamonds are closely arranged and pressed by an indenter, a piece of iron-nickel-cobalt alloy sheet is covered on the diamond layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Granularityaaaaaaaaaa
Login to View More

Abstract

The invention relates to an adamas wafer and the production method thereof. The content of non-adamas matters in the adamas wafer is 0.05 to 15% of the total quality of the adamas wafer. The production method comprises: the surface cladding treatment is carried out on the adamas abrasive material by utilizing organic matters; the adamas abrasive material after the treatment is flatly laid in a die, and the surface is tightly pressed by utilizing a metal catalyst after cladding; then the adamas abrasive material in the die is put into a vacuum furnace, and the heat treatment is carried out for 2 to 10 hours at 400 to 1000 DEG C; the die is placed into a pyrophyllite synthetic block to be treated for 1 to 10 hours through a hexahedral press under the condition of 6 to 8GPa and 1400 to 2000 DEG C; the die is taken out after the heating is stopped and the pressure is released; and the metal catalyst on the die and the surface is eliminated by utilizing aqua fortis to obtain the adamas wafer. The product has the advantages of stable quality, quite low equipment investment, low cost, quite large wafer size and wide application range, the heat conductivity reaches 10 to 12W / (cm.K), and the adamas wafer can be taken as a heat dissipation material with high property and can be used for a solar photovoltaic battery base material and a semiconductor chip.

Description

technical field [0001] The invention relates to a diamond product and a production method thereof, in particular to a diamond wafer produced by using existing cheap industrial diamond abrasives and a production method thereof. Background technique [0002] As a super material, diamond has unique characteristics. Compared with other materials, it has the following characteristics: (1) High hardness: it is the hardest substance known in the world. The microhardness of diamond is 90GPa; (2) Yang The largest modulus: the Young's modulus of diamond is about 1100GPa; (3) The highest thermal conductivity: the thermal conductivity of type IIa natural diamond at room temperature is 20W / (cm.K); artificial gem-grade diamond can reach or even exceed The thermal conductivity of type IIa natural diamond; the thermal conductivity of artificial large-grained single crystal diamond with isotopically pure carbon (C12 is 99.9%) can reach 33 W / (cm.K); (4) The molar density is the largest: the m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/12H01L21/02
Inventor 赵仁玉汪静
Owner HENAN UNION ABRASIVES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com