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Indium tin oxide (ITO) stereo electrode, preparation method and preparation device thereof as well as preparation method of solar battery

A solar cell, indium tin oxide technology, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of large sheet resistance, damage, and high equipment cost, reduce the probability of damage, increase the contact area, The effect of uniform current distribution

Inactive Publication Date: 2010-12-29
SPRING FOUND OF NCTU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, although the contact area with the dye molecule reaction layer has been increased, due to the poor stability of the zinc oxide material itself, it is easily damaged by acid-base solutions, and the sheet resistance of the zinc oxide material itself is large, and its visible light band The penetration rate is only 80%, so the results for improving the efficiency of organic solar cells are not as expected
In addition, the metalorganic chemical vapor deposition (MOCVD) technology used by it requires high equipment costs, and it takes a long time to grow dendritic zinc oxide nanowires on transparent conductive materials, so the industrial utilization effect is not good.

Method used

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  • Indium tin oxide (ITO) stereo electrode, preparation method and preparation device thereof as well as preparation method of solar battery
  • Indium tin oxide (ITO) stereo electrode, preparation method and preparation device thereof as well as preparation method of solar battery
  • Indium tin oxide (ITO) stereo electrode, preparation method and preparation device thereof as well as preparation method of solar battery

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Experimental program
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Effect test

Embodiment 1

[0052] Such as figure 2 Shown is the vapor deposition machine 2 of this embodiment for vapor deposition of a substrate with conductive material attached to the surface, which includes: a reaction chamber 20, an vapor deposition unit 21, a substrate support base 22, and a nitrogen supply valve 23 , An oxygen supply valve 24, an exhaust pipe 25, a heater 26, and a thermometer 27. Wherein, the evaporation unit 21 is disposed at the bottom of the reaction chamber 20, and the substrate support base 22 is disposed at the top of the reaction chamber 20. When the substrate support 22 is equipped with a substrate 28 (such as image 3 When shown), the normal direction of the substrate 28 and the bottom of the reaction chamber 20 can be adjusted to form an included angle θ of 0 to 90 degrees.

Embodiment 2

[0054] Such as Figure 4 Shown is the vapor deposition machine 2 of this embodiment for vapor deposition of a substrate with a conductive material on its surface. In addition to having the same features as the vapor deposition machine 2 of Embodiment 1, the vapor deposition machine 2 of this embodiment also It includes a rotating table 29, which is arranged between the substrate support base 22 and the top of the reaction chamber 20. The rotation of the rotating table 29 allows the substrate support base 22 to revolve relative to the position of the evaporation unit 21 in the reaction chamber 20. Transform.

Embodiment 3

[0055] Example 3: Preparation of indium tin oxide three-dimensional electrode

[0056] Use as figure 2 The vapor deposition machine 2 of Embodiment 1 is shown to prepare the indium tin oxide three-dimensional electrode of this embodiment. Please also refer to figure 2 and image 3 , First, (A) mount the substrate 28 with a conductive layer on the surface on the substrate support 22 in the reaction chamber 20, and make the normal direction of the substrate 28 and the bottom of the reaction chamber form 0 to 90 degrees (preferably The included angle θ is about 5 to 85 degrees, and more preferably about 60 to 75 degrees), the included angle θ in this embodiment is 67 degrees. Next, (B) Nitrogen and oxygen are supplied from the nitrogen supply valve 23 and the oxygen supply valve 24, respectively, and the flow ratio of the supplied oxygen to the nitrogen is controlled to 0.5 or less, and the pressure in the reaction chamber 20 is maintained at 10 -6 To 10 -3 Within the pressure ran...

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Abstract

The invention discloses an indium tin oxide (ITO) stereo electrode and a preparation method thereof. The ITO stereo electrode in the invention comprises a conductive layer and a plurality of ITO conductive nano columns formed on the surface of the conductive layer, the adjustable length range of the ITO stereo electrode nano column is 10nm-1500nm, and the optimal length adjustable range is 50nm-200nm when the ITO stereo electrode nano column is applied in a solar battery. When the ITO electrode with a stereo structure is applied in an organic optoelectronic component, such as an organic solar battery, an organic light-emitting diode and the like, the contact area of an active layer and the electrode can be increased, thus effectively enhancing the efficiency for injecting or educing current. The invention also discloses an evaporator for preparing the ITO stereo electrode, the organic solar battery containing the ITO stereo electrode and a method for preparing the organic solar battery.

Description

Technical field [0001] The invention relates to an indium tin oxide (ITO) three-dimensional electrode and a preparation method thereof, an evaporation machine for preparing the indium tin oxide three-dimensional electrode, an organic solar cell containing the indium tin oxide three-dimensional electrode, and a preparation method for the organic solar cell method. Background technique [0002] Such as figure 1 As shown, the conventional organic solar cell forming method includes the following steps. First, a transparent layered indium tin oxide (ITO) electrode layer 11 (S1) is formed on the glass substrate 10, and then a hole conduction layer is formed on the layered indium tin oxide (ITO) electrode layer 11 by a spin coating method 12 (S2), an organic polymer reaction layer 13 is formed on the hole conductive layer 12 (S3). Finally, an aluminum metal electrode 14 is fabricated on the organic polymer reaction layer 13 (S4), so that a well-known organic solar cell 1 is fabricated...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/48C23C14/24C23C14/08H01L51/42
CPCY02E10/50Y02E10/549
Inventor 张家华余沛慈徐敏翔韦光华苏明鑫
Owner SPRING FOUND OF NCTU
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