Structure of SiC or Si substrate GaN-based crystal and method for growing same

Abstract

The invention provides a structure of SiC or Si substrate GaN-based crystal and a method for growing the same. The structure of the GaN-based crystal, from the bottom to the top, comprises an SiC or Si substrate, an A1N buffer layer, an N-type GaN layer, an MQW and a P-type GaN layer, wherein the A1N buffer layer comprises 3 to 5 three-dimensional and two-dimensional circulations, the thickness of the three-dimensional A1N is 50 to 100 nanometers, and the thickness of the two-dimensional A1N is 30 to 60 nanometers. The method for growing the structure comprises the following steps of: performing the three-dimensional growth of the A1N, wherein the growth thickness is 50 to 100 nanometers; performing two-dimensional growth of the A1N, wherein the growth thickness is 30 to 60 nanometers; circulating the steps for 3 to 5 times; and growing the N-type GaN layer, the MQW layer and the P-type GaN layer. In the method, the A1N is used as the buffer layer, and the three-dimensional and two-dimensional circulation resonant growth of the MOCVD is utilized, so that the dislocation density is effectively reduced, and the dislocation density of the grown film is very low; and because the crystal quality is improved and the stress is released, the thicker full-structure LEDs can be obtained by growth and no crack occurs.

Description

technical field [0001] The invention relates to a method for improving the growth quality of GaN crystals on SiC (silicon carbide) substrates, belonging to the field of optoelectronic technology. Background technique [0002] Group III nitrides represented by GaN (AlN, GaN, InN, AlGaInN) have excellent photoelectric properties, so they are widely used in blue light, green light, ultraviolet light-emitting diodes (LEDs) and high-frequency, high-temperature, high-power electronic devices. application. Due to the lack of lattice-matched substrates, III-nitrides are heteroepitaxy on other materials. Commonly used substrates are sapphire, SiC (silicon carbide), Si (silicon), gallium arsenide, zinc oxide, etc., commonly used The epitaxy methods include metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and hydride vapor phase epitaxy (HVPE). [0003] SiC (silicon carbide) is a wide bandgap semiconductor material, and it has many advantages in applicati...

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Problems solved by technology

[0010] The above literature uses the MOCVD process, and the growth conditions are changed many times during the growth process. For the vertical growth height, etc., no specific implementation method is given, and the pattern etching mask and SiN mask are introduced, which makes the implementation more complicated.

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