Method for manufacturing integrated micro four-point probe chip based on nano-processing technology

Abstract

The invention discloses a method for manufacturing an integrated micro four-point probe based on nano-processing technology, which comprises the following steps: a, growing a first silicon nitride layer on the back face of a double-face oxidized silicon slice and manufacturing a first photo-resist mask, and performing etching according to the mask pattern to expose silicon; b, manufacturing a second photo-resist mask on the front face of the silicon slice, removing the silicon oxide layer not covered by the second photo-resist mask on the front face of the silicon slice, but at least remaining a part, and growing a second silicon nitride layer on the front face after the removal of the photo-resist; and c, etching the sample obtained by the step b) in KOH solution, removing the second silicon nitride layer and the silicon oxide layer on the front face to expose the silicon, etching out an undercut structure, and finally growing a conductive layer on the front face. The manufacturing method has the advantage that: the thermal expansion coefficient of the mask is consistent with that of the silicon, the manufacturing process is simplified, and the yield is improved by remaining a silicon dioxide thin film on the surface of the silicon slice and then growing a silicon nitride thin film to realize a double-layer mask.

Description

technical field [0001] The invention belongs to the field of nano-processing, and more specifically relates to a method for manufacturing an integrated micro four-point probe chip based on nano-processing technology. Background technique [0002] Generally, the micro four-point probe is an electrical transport measurement device used on the crystal surface. Due to its fixed probe spacing and small mechanical constant of the probe, it can realize non-destructive measurement of surface resistance and ultra-thin sheet resistance at the micron scale. Measurement. [0003] At present, in the method of making micro four-point probes, a silicon nitride film grown by low-pressure vapor deposition (LPCVD) is generally used as a protective mask (see Scanning microscopic four-point conductivity probes published by C.L.Petersen, T.M.Hansen et al., Sensors and actuators A96 (2002) 53-58), but because the silicon nitride itself is not dense enough, and the thermal expansion coefficient i...

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Problems solved by technology

[0003] At present, in the method of making micro four-point probes, a silicon nitride film grown by low-pressure vapor deposition (LPCVD) is generally used as a protective mask (see Scanning microscopic four-point conductivity probes published by C.L.Petersen, T.M.Hansen et al., Sensors and actuators A96 (2002) 53-58), but because the silicon nitride itself is not dense enough, and the thermal expansion coefficient is inconsistent with silicon, not only cannot resist the long-term alkali corrosion process, but also easily causes the chip cantilever to bend and break ( See Figure 1), resulting in lower yield

It is also known to adopt a single silicon dioxide film or a chromium film as a mask (see Chinese patent application CN 101417890A "Silicon Nitride Wet Etching Method"), but because this mask is difficult to resist corrosion for a long time , it is easy to produce additional etching on the sample

At present, a method of using a composite film is also disclosed (see Chinese patent application CN101290362A "A Method for Making Multi-level Micro-mirrors by Wet Etching of Silicon"), but because of its complicated preparation process, it is not suitable for four-point micro-mirrors. Production of probes

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